- 专利标题: System and method for ESD protection
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申请号: US12003929申请日: 2008-01-03
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公开(公告)号: US07687858B2公开(公告)日: 2010-03-30
- 发明人: Agnes N. Woo , Kenneth R. Kindsfater , Fang Lu
- 申请人: Agnes N. Woo , Kenneth R. Kindsfater , Fang Lu
- 申请人地址: US CA Irvine
- 专利权人: Broadcom Corporation
- 当前专利权人: Broadcom Corporation
- 当前专利权人地址: US CA Irvine
- 代理机构: Sterne, Kessler, Goldstein & Fox PLLC
- 主分类号: H01L29/7235
- IPC分类号: H01L29/7235
摘要:
An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver. ESD protection is provided by a pad ring and ESD clamping structure that maintains signal integrity. Also provided are shunts at each pin to discharge ESD build up. The shunts utilize a gate boosting structure to provide sufficient small signal RF performance, and minimal parasitic loading.
公开/授权文献
- US20080174925A1 System and method for ESD protection 公开/授权日:2008-07-24
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