发明授权
- 专利标题: Method for controlled density growth of carbon nanotubes
- 专利标题(中): 碳纳米管的受控密度生长方法
-
申请号: US11381981申请日: 2006-05-05
-
公开(公告)号: US07687981B2公开(公告)日: 2010-03-30
- 发明人: Farzad Parsapour
- 申请人: Farzad Parsapour
- 申请人地址: US NJ Bridgewater
- 专利权人: Brother International Corporation
- 当前专利权人: Brother International Corporation
- 当前专利权人地址: US NJ Bridgewater
- 代理机构: Darby & Darby
- 主分类号: H01J1/304
- IPC分类号: H01J1/304 ; H01J1/30 ; H01J9/00
摘要:
Described is a method for preparation of carbon nanotubes (CNTs) with medium to low-site density growth for use in field emission devices (FEDs). The method involves the deposition of a non-catalytic metal layer (interlayer), preferably a metallic conductor, onto the surface of a substrate, prior to the deposition of a catalytic layer (overlayer). The interlayer allows for only partial (sparse) growth of CNTs on the substrate, and helps to prevent resist layer “lift-off” when photolithographic processing is employed.
公开/授权文献
- US20070259128A1 METHOD FOR CONTROLLED DENSITY GROWTH OF CARBON NANOTUBES 公开/授权日:2007-11-08
信息查询