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    Method for enhancing growth of carbon nanotubes
    1.
    发明授权
    Method for enhancing growth of carbon nanotubes 有权
    增强碳纳米管生长的方法

    公开(公告)号：US09346679B2

    公开(公告)日：2016-05-24

    申请号：US12251228

    申请日：2008-10-14

    Applicant: Farzad Parsapour

    Inventor： Farzad Parsapour

    IPC: B06B1/20 ,  C01B31/02 ,  B82Y30/00 ,  B82Y40/00

    CPC classification number: C01B31/0233 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C01B2202/34

    Abstract: A method for fabricating a plurality of carbon nanotube structures having enhanced length is disclosed. Several steps are involved in this method. First, a substrate is provided. Next, a non-catalytic metal layer is formed on the substrate. Then, a catalytic metal layer is formed on the non-catalytic metal layer. After that, the catalytic metal layer is subjected to ultrasonication and exposure to water. Finally, the plurality of carbon nanotube structures is formed on the substrate in the presence of the catalytic metal layer. In this embodiment, the ultrasonication and exposure to water step includes submerging the catalytic metal layer in a liquid bath, ultrasonicating the catalytic metal layer and the liquid bath, and exposing the catalytic metal layer to water.

    Abstract translation: 公开了一种制造具有增强长度的多个碳纳米管结构的方法。 这个方法涉及到几个步骤。 首先，提供基板。 接着，在基板上形成非催化金属层。 然后，在非催化金属层上形成催化金属层。 之后，对催化金属层进行超声波处理并暴露于水中。 最后，在催化金属层的存在下，在基板上形成多个碳纳米管结构。 在本实施例中，超声波和暴露于水的步骤包括将催化金属层浸没在液槽中，使催化金属层和液槽超声波化，并将催化金属层暴露于水中。

    QUANTUM DOT OPTOELECTRONIC DEVICE AND METHODS THEREFOR
    2.
    发明申请
    QUANTUM DOT OPTOELECTRONIC DEVICE AND METHODS THEREFOR 有权
    量子光电器件及其方法

    公开(公告)号：US20130026445A1

    公开(公告)日：2013-01-31

    申请号：US13190884

    申请日：2011-07-26

    Applicant: Farzad PARSAPOUR

    Inventor： Farzad PARSAPOUR

    IPC: H01L33/04 ,  H01L31/0352 ,  H01L29/12

    CPC classification number: H01L51/426 ,  H01L31/035218 ,  H01L31/18 ,  H01L33/06 ,  H01L51/0037 ,  H01L2251/308 ,  Y02E10/549

    Abstract: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.

    Abstract translation: 一种用于制造光电子器件的光电子器件和方法，包括：在包括至少一个电子导电层的衬底上形成量子点层，所述至少一个电子导电层包括具有有机覆盖层的多个量子点; 并通过物理处理量子点层，包括热处理和等离子体处理两者的物理处理，从量子点层的量子点去除有机覆盖层。

    Composition and method for adhesion of color filters to a faceplate panel of a cathode ray tube (CRT)
    4.
    发明授权
    Composition and method for adhesion of color filters to a faceplate panel of a cathode ray tube (CRT) 失效
    将滤色器粘附到阴极射线管（CRT）的面板的组合物和方法

    公开(公告)号：US06858360B2

    公开(公告)日：2005-02-22

    申请号：US10153752

    申请日：2002-05-22

    Applicant: Farzad Parsapour

    Inventor： Farzad Parsapour

    IPC: H01J9/227 ,  H01J29/18 ,  H01J29/30 ,  H01J29/32 ,  G03C5/00

    CPC classification number: H01J29/327 ,  H01J9/2271 ,  H01J29/185 ,  H01J29/30

    Abstract: A method and composition for manufacturing a luminescent screen assembly for a color cathode ray tube (CRT) is disclosed. The luminescent screen assembly is formed on an interior surface of a faceplate panel of the CRT. The luminescent screen assembly has a patterned light-absorbing matrix thereon. The matrix defines a first set of fields, a second set of fields, and a third set of fields. An aqueous pigment suspension is applied to the first set of fields. The aqueous pigment suspension comprises a pigment, one or more surface-active agents and at least one non-pigmented oxide particle. The at least one non-pigmented oxide particle has a size that is less than that of the pigment.

    Abstract translation: 公开了一种制造彩色阴极射线管（CRT）荧光屏组件的方法和组合物。 荧光屏组件形成在CRT的面板面板的内表面上。 荧光屏组件在其上具有图案化的光吸收矩阵。 矩阵定义第一组字段，第二组字段和第三组字段。 将水性颜料悬浮液施加到第一组场。 水性颜料悬浮液包含颜料，一种或多种表面活性剂和至少一种非着色氧化物颗粒。 至少一种非着色氧化物颗粒的尺寸小于颜料的尺寸。

    Quantum dot optoelectronic devices with enhanced performance
    6.
    发明授权
    Quantum dot optoelectronic devices with enhanced performance 有权
    量子点光电子器件具有增强的性能

    公开(公告)号：US08164083B2

    公开(公告)日：2012-04-24

    申请号：US12251207

    申请日：2008-10-14

    Applicant: Farzad Parsapour

    Inventor： Farzad Parsapour

    IPC: H01L29/66 ,  H01L21/28

    CPC classification number: H01L51/502 ,  H01L51/0023 ,  H01L51/0037 ,  H01L2251/308

    Abstract: An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot light-emitting device, which includes (1) a substrate which is transparent or translucent, (2) an anode electrical conducting layer which is transparent or translucent, and is located adjacent to the substrate, (3) a planarizing/hole injection layer which is located adjacent to the anode electrical conducting layer, (4) a quantum dot layer including the plurality of quantum dots which do not have capping layers, and (5) a cathode electrical conducting layer which is located adjacent to the quantum dot layer.

    Abstract translation: 公开了一种光电器件，其包括量子点层，其包括不具有封盖层的多个量子点。 该光电子器件可以是量子点发光器件，其包括（1）透明或半透明的衬底，（2）透明或半透明并且位于衬底附近的阳极导电层（3 ）与阳极导电层相邻的平坦化/空穴注入层，（4）包含不具有覆盖层的多个量子点的量子点层，以及（5）位于 邻近量子点层。

    Cathode ray tube having an internal neutral density filter
    8.
    发明授权
    Cathode ray tube having an internal neutral density filter 失效
    具有内部中性密度滤光片的阴极射线管

    公开(公告)号：US06819040B2

    公开(公告)日：2004-11-16

    申请号：US10375416

    申请日：2003-02-27

    Applicant: Farzad Parsapour ,  Bhanumurthy Venkatrama Subrahmanya Gunturi ,  Steven Anthony Colbert ,  Brian Thomas Collins

    Inventor： Farzad Parsapour ,  Bhanumurthy Venkatrama Subrahmanya Gunturi ,  Steven Anthony Colbert ,  Brian Thomas Collins

    IPC: H01J2988

    CPC classification number: H01J9/20 ,  H01J29/898

    Abstract: A composition and method of forming an internal neutral density filter on a luminescent screen assembly of a cathode ray tube (CRT) is disclosed. The luminescent screen assembly is formed on an interior surface of a glass faceplate panel of the CRT tube. The luminescent screen assembly includes a patterned light-absorbing matrix that defines three sets of fields corresponding to one of a blue region, a green region and a red region. An internal neutral density filter is formed on the light-absorbing matrix. An array of blue, green and red color phosphors is formed on the internal neutral density filter corresponding to one of the blue region, the green region and the red region defined in the light-absorbing matrix. The internal neutral density filter has a composition including a red pigment, a blue pigment and at least one non-pigmented oxide particle.

    Abstract translation: 公开了一种在阴极射线管（CRT）的荧光屏组件上形成内部中性密度滤光片的组合物和方法。 荧光屏组件形成在CRT管的玻璃面板的内表面上。 荧光屏组件包括限定对应于蓝色区域，绿色区域和红色区域中的一个的三组场的图案化光吸收矩阵。 在光吸收基体上形成内部中性密度滤光片。 在对应于限定在光吸收基质中的蓝色区域，绿色区域和红色区域之一的内部中性密度滤光片上形成蓝色，绿色和红色荧光体阵列。 内部中性密度过滤器具有包含红色颜料，蓝色颜料和至少一种非着色氧化物颗粒的组合物。

    Quantum dot optoelectronic device and methods therfor
    9.
    发明授权
    Quantum dot optoelectronic device and methods therfor 有权
    量子点光电子器件及其方法

    公开(公告)号：US09431622B2

    公开(公告)日：2016-08-30

    申请号：US13190884

    申请日：2011-07-26

    Applicant: Farzad Parsapour

    Inventor： Farzad Parsapour

    IPC: B05D5/12 ,  H01L29/08 ,  H01L51/42 ,  H01L31/0352 ,  H01L51/00

    CPC classification number: H01L51/426 ,  H01L31/035218 ,  H01L31/18 ,  H01L33/06 ,  H01L51/0037 ,  H01L2251/308 ,  Y02E10/549

    Abstract: An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.

    Abstract translation: 一种用于制造光电子器件的光电子器件和方法，包括：在包括至少一个电子导电层的衬底上形成量子点层，所述至少一个电子导电层包括具有有机覆盖层的多个量子点; 并通过物理处理量子点层，包括热处理和等离子体处理两者的物理处理，从量子点层的量子点去除有机覆盖层。

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