发明授权
- 专利标题: Method for producing polycrystalline silicon
- 专利标题(中): 多晶硅的制造方法
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申请号: US12190229申请日: 2008-08-12
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公开(公告)号: US07691357B2公开(公告)日: 2010-04-06
- 发明人: Takaaki Shimizu , Kyoji Oguro , Takeshi Aoyama
- 申请人: Takaaki Shimizu , Kyoji Oguro , Takeshi Aoyama
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-229856 20070905
- 主分类号: C01B33/08
- IPC分类号: C01B33/08 ; C07F7/00
摘要:
A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
公开/授权文献
- US20090060822A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 公开/授权日:2009-03-05
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