发明授权
- 专利标题： Immersion lithography edge bead removal
- 专利标题（中）： 浸没光刻边缘珠去除
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申请号： US11337986申请日： 2006-01-24
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公开(公告)号： US07691559B2公开(公告)日： 2010-04-06
- 发明人: Ching-Yu Chang , C. C. Ke , Vincent Yu
- 申请人： Ching-Yu Chang , C. C. Ke , Vincent Yu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004
摘要：
A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
公开/授权文献
- US20070003879A1 Immersion lithography edge bead removal 公开/授权日：2007-01-04
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