发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11579141申请日： 2005-05-16
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公开(公告)号： US07691686B2公开(公告)日： 2010-04-06
- 发明人: Kazuo Nishi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara
- 申请人： Kazuo Nishi , Junya Maruyama , Naoto Kusumoto , Yuusuke Sugawara
- 申请人地址： unknown Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： unknown Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2004-152160 20040521
- 国际申请： PCT/JP2005/009285 WO 20050516
- 国际公布： WO2005/114749 WO 20051201
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.
公开/授权文献
- US20080001148A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日：2008-01-03
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