公开(公告)号：US09095066B2

公开(公告)日：2015-07-28

申请号：US12483102

申请日：2009-06-11

申请人： Naoto Kusumoto

发明人： Naoto Kusumoto

IPC分类号： H05K3/34 ,  H05K1/11 ,  H05K1/14

CPC分类号： H05K1/111 ,  H05K1/141 ,  H05K3/341 ,  H05K3/3431 ,  H05K3/3442 ,  H05K2201/049 ,  H05K2201/09381 ,  H05K2201/09427 ,  H05K2201/10121 ,  H05K2201/10378 ,  H05K2201/10636 ,  H05K2203/048 ,  Y02P70/611 ,  Y02P70/613

摘要： A printed board is provided, which includes at least a first connecting electrode and a second connecting electrode. A solder is provided over the first connecting electrode and the second connecting electrode, and a chip component is provided over the solder. The chip component includes a first terminal electrode and a second terminal electrode. The first connecting electrode is overlapped with the first terminal electrode and is electrically connected to the first terminal electrode through the solder. The second connecting electrode is overlapped with the second terminal electrode and is electrically connected to the second terminal electrode through the solder. Two corner portions of each of the first connecting electrode and the second connecting electrode are overlapped with two corner portions of each of the first terminal electrode and the second terminal electrode.

摘要翻译： 提供了一种印刷电路板，其包括至少第一连接电极和第二连接电极。 在第一连接电极和第二连接电极之上提供焊料，并且在焊料上方设置芯片部件。 芯片部件包括第一端子电极和第二端子电极。 第一连接电极与第一端子电极重叠，并通过焊料与第一端子电极电连接。 第二连接电极与第二端子电极重叠，并且通过焊料与第二端子电极电连接。 第一连接电极和第二连接电极的两个角部与第一端子电极和第二端子电极的两个角部重叠。

公开(公告)号：US09059347B2

公开(公告)日：2015-06-16

申请号：US13159579

申请日：2011-06-14

申请人： Kazuo Nishi ,  Takashi Hirose ,  Naoto Kusumoto

发明人： Kazuo Nishi ,  Takashi Hirose ,  Naoto Kusumoto

IPC分类号： H01L31/06 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0465

CPC分类号： H01L31/03762 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03921 ,  H01L31/0465 ,  H01L31/1816 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.

摘要翻译： 具有低照度的高发电量的光电转换装置，其中半导体层被适当地分离并且防止了电池的侧表面部分的短路。 光电转换装置包括形成在与第一电极相邻的一个第一电极和另一个第一电极之间的隔离槽; 包括在第一电极上具有一种导电类型的第一半导体层的堆叠，使用本征半导体形成的第二半导体层和具有与一种导电类型相反的导电类型的第三半导体层; 以及连接电极，其连接与包含在与所述一个第一电极相邻的另一个第一电极上形成的堆叠中的第三半导体层接触的第一电极和第二电极。 第二半导体层的侧表面部分不结晶。

公开(公告)号：US08557614B2

公开(公告)日：2013-10-15

申请号：US13336356

申请日：2011-12-23

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Naoto Kusumoto

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Naoto Kusumoto

IPC分类号： H01L21/66

CPC分类号： H01L51/56 ,  H01L27/3204 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5361 ,  H01L2251/5392 ,  H01L2251/568

摘要： An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.

摘要翻译： 本发明的目的是提供一种照明装置的制造方法，其中解决了发光元件的上部电极和下部电极之间的短路问题，而不会降低发光元件的正常部分的发光特性 发光元件最大。 在包括上电极，电致发光层和下电极的发光元件中，用激光束照射不希望地形成在上电极和下电极之间的短路部分，由此短路的区域 形成去除的部分，然后用具有透光性的绝缘树脂填充该区域。 因此，解决了上电极和下电极之间短路的问题，并且提高了照明装置的产量。

公开(公告)号：US08432018B2

公开(公告)日：2013-04-30

申请号：US13271469

申请日：2011-10-12

申请人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

发明人： Yoshitaka Dozen ,  Tomoyuki Aoki ,  Hidekazu Takahashi ,  Daiki Yamada ,  Eiji Sugiyama ,  Kaori Ogita ,  Naoto Kusumoto

IPC分类号： H01L29/06

CPC分类号： H01L23/293 ,  H01L23/49855 ,  H01L23/66 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/13 ,  H01L28/10 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

摘要翻译： 本发明提供了利用半导体器件中使用的柔性衬底的优点的薄且可弯曲的半导体器件以及半导体器件的制造方法。 半导体器件具有被绝缘层覆盖的至少一个表面，该绝缘层用作用于保护的衬底。 在半导体器件中，绝缘层形成在用作天线的导电层上，使得不覆盖导电层的部分中的绝缘层的厚度比值至少为1.2，并且该值 在导电层上形成的绝缘层与导电层的厚度比为至少0.2。 此外，导电层而不是绝缘层不会在半导体器件的侧面露出，并且绝缘层覆盖TFT和导电层。

公开(公告)号：US08258512B2

公开(公告)日：2012-09-04

申请号：US12752388

申请日：2010-04-01

申请人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

发明人： Kazuo Nishi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara

IPC分类号： H01L29/04

CPC分类号： H01L27/14665 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469 ,  H01L27/14692

摘要： An object of the present invention to provide a semiconductor device manufactured in short time by performing the step of forming the thin film transistor and the step of forming the photoelectric conversion layer in parallel, and to provide a manufacturing process thereof. According to the present invention, a semiconductor device is manufactured in such a way that a thin film transistor is formed over a first substrate, a photoelectric conversion element is formed over a second substrate, and the thin film transistor and the photoelectric conversion element are connected electrically by sandwiching a conductive layer between the first and second substrates opposed to each other so that the thin film transistor and the photoelectric conversion element are located between the first and second substrates. Thus, a method for manufacturing a semiconductor device which suppresses the increase in the number of steps and which increases the throughput can be provided.

摘要翻译： 本发明的目的在于提供一种通过进行薄膜晶体管的形成工序和并联形成光电转换层的工序，在短时间内制造的半导体器件，并提供其制造工艺。 根据本发明，制造半导体器件，使得在第一衬底上形成薄膜晶体管，在第二衬底上形成光电转换元件，并且连接薄膜晶体管和光电转换元件 通过将导电层夹在彼此相对的第一和第二基板之间，使得薄膜晶体管和光电转换元件位于第一和第二基板之间。 因此，可以提供一种制造半导体器件的方法，该方法抑制步骤数量的增加并增加通过量。

公开(公告)号：US20120164761A1

公开(公告)日：2012-06-28

申请号：US13336356

申请日：2011-12-23

申请人： Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Naoto KUSUMOTO

发明人： Shunpei YAMAZAKI ,  Yasuyuki ARAI ,  Naoto KUSUMOTO

IPC分类号： H01L21/66

CPC分类号： H01L51/56 ,  H01L27/3204 ,  H01L51/5268 ,  H01L51/5275 ,  H01L2251/5361 ,  H01L2251/5392 ,  H01L2251/568

摘要： An object is to provide a method for manufacturing a lighting device, in which a problem of a short circuit between an upper electrode and a lower electrode of a light-emitting element is solved without reducing a light-emitting property of a normal portion of the light-emitting element to the utmost. In a light-emitting element including an upper electrode, an electroluminescent layer, and a lower electrode, a short-circuited portion that is undesirably formed between the upper electrode and the lower electrode is irradiated with a laser beam, whereby a region where the short-circuited portion is removed is formed, and then the region is filled with an insulating resin having a light-transmitting property. Thus, the problem of the short circuit between the upper electrode and the lower electrode is solved and yield of a lighting device is improved.

摘要翻译： 本发明的目的是提供一种照明装置的制造方法，其中解决了发光元件的上部电极和下部电极之间的短路问题，而不会降低发光元件的正常部分的发光特性 发光元件最大。 在包括上电极，电致发光层和下电极的发光元件中，用激光束照射不希望地形成在上电极和下电极之间的短路部分，由此短路的区域 形成去除的部分，然后用具有透光性的绝缘树脂填充该区域。 因此，解决了上电极和下电极之间短路的问题，并且提高了照明装置的产量。

公开(公告)号：US08207589B2

公开(公告)日：2012-06-26

申请号：US12068849

申请日：2008-02-12

申请人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

发明人： Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara

IPC分类号： H01L27/146

CPC分类号： H01L31/147 ,  H01L27/12 ,  H01L27/1214 ,  H01L31/153 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

摘要： A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

摘要翻译： 一种光电转换装置，包括：第一基板，其端部被切割成倾斜或具有凹槽形状; 在所述第一衬底上的光电二极管和放大器电路; 电连接到所述光电二极管并且设置在所述第一基板的一个端部上的第一电极; 电连接到所述放大器电路并且设置在所述第一基板的另一端部上的第二电极; 以及在其上具有第三和第四电极的第二基板。 第一电极和第二电极分别被附接到第三和第四电极，导电材料不仅设置在第一，第二，第三和第四电极的彼此面对，而且在第一和第二电极的第一和第二电极的侧表面处 第二电极，以增加光电转换装置与安装有光电转换装置的部件之间的粘合性。

公开(公告)号：US20120132271A1

公开(公告)日：2012-05-31

申请号：US13299768

申请日：2011-11-18

申请人： Takashi Hirose ,  Naoto Kusumoto

发明人： Takashi Hirose ,  Naoto Kusumoto

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/022433 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode.

摘要翻译： 在制造光电转换装置的方法中，提供了一种用于形成嵌入电极的方法，其适用于具有高纵横比的凹槽。 在晶体硅衬底中形成与第一沟槽交叉的第一沟槽和第二沟槽，在i型第一硅半导体层，具有一种导电类型的第二硅半导体层和透光导电膜上依次形成 晶体硅衬底的表面和槽上，将导电树脂注入到第一槽中，并且通过毛细作用填充导电树脂以形成栅极。

公开(公告)号：US08153511B2

公开(公告)日：2012-04-10

申请号：US11420889

申请日：2006-05-30

申请人： Daiki Yamada ,  Naoto Kusumoto

发明人： Daiki Yamada ,  Naoto Kusumoto

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/40 ,  B23K2103/172 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1288 ,  H01L27/13

摘要： It is an object to improve a yield of a step of cutting off a substrate. A substrate is cut off by using an ablation process. An ablation process uses a phenomenon in which a molecular bond in a portion irradiated with a laser beam, that is, a portion which absorbs the laser beam is cut off, photodegraded, and evaporated. In other words, a substrate is irradiated with a laser beam, a molecular bond in a portion of the substrate is cut off, photodegraded, and evaporated; accordingly, a groove is formed in the substrate. A method for cutting the substrate has steps of selectively emitting a laser beam and forming a groove in the substrate, and selectively emitting a laser beam to the groove and cutting off the substrate. Methods for manufacturing a groove in a substrate and cutting off a substrate are used for manufacturing a semiconductor device.

摘要翻译： 本发明的目的是提高切割基板的步骤的产量。 通过使用消融工艺来切断衬底。 消融处理使用这样的现象，其中用激光束照射的部分中的分子键即吸收激光束的部分被切断，光降解和蒸发。 换句话说，用激光束照射基板，将基板的一部分中的分子键切断，光降解并蒸发; 因此，在基板中形成槽。 用于切割基板的方法具有选择性地发射激光束并在基板中形成凹槽的步骤，并且选择性地将激光束发射到凹槽并切断基板。 用于制造衬底中的沟槽并切断衬底的方法用于制造半导体器件。

公开(公告)号：US08053816B2

公开(公告)日：2011-11-08

申请号：US11681638

申请日：2007-03-02

申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

IPC分类号： H01L27/148

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

摘要： It is an object of the present invention to obtain a photoelectric conversion device having a favorable spectral sensitivity characteristic and no variation in output current without such a contamination substance mixed into a photoelectric conversion layer or a transistor. Further, it is another object of the present invention to obtain a highly reliable semiconductor device in a semiconductor device having such a photoelectric conversion device. The present invention relates to a semiconductor device including, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer having a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

摘要翻译： 本发明的目的是获得具有良好的光谱灵敏度特性的光电转换装置，并且没有混入光电转换层或晶体管中的污染物质的输出电流的变化。 此外，本发明的另一个目的是在具有这种光电转换装置的半导体器件中获得高度可靠的半导体器件。 本发明涉及一种在绝缘表面上包括第一电极的半导体器件; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及具有p型半导体层，i型半导体层和n型半导体层的光电转换层，其中光电转换层的一个端部与第一电极接触， 并且其中滤色器的端部位于光电转换层的另一端部的内部。