发明授权
US07691708B2 Trench type MOSgated device with strained layer on trench sidewall
有权
沟槽型MOS器件,在沟槽侧壁上具有应变层
- 专利标题: Trench type MOSgated device with strained layer on trench sidewall
- 专利标题(中): 沟槽型MOS器件,在沟槽侧壁上具有应变层
-
申请号: US11804184申请日: 2007-05-17
-
公开(公告)号: US07691708B2公开(公告)日: 2010-04-06
- 发明人: David Paul Jones , Robert P. Haase
- 申请人: David Paul Jones , Robert P. Haase
- 申请人地址: US CA El Segundo
- 专利权人: International Rectifier Corporation
- 当前专利权人: International Rectifier Corporation
- 当前专利权人地址: US CA El Segundo
- 代理机构: Farjami & Farjami LLP
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A MOSgated trench device has a reduced on resistance by forming a less than about a 13 nm thick strained SiGe layer on the silicon surface of the trenches and forming a thin (30 nm or less) layer of epitaxially deposited silicon on the SiGe layer which epi layer is converted to a gate oxide layer. The conduction channel formed by the SiGe layer is permanently strained to increase its mobility particularly hole mobility.