发明授权
- 专利标题： Electrically rewritable non-volatile memory element and method of manufacturing the same
- 专利标题（中）： 电可重写非易失性存储元件及其制造方法
-
申请号： US11334504申请日： 2006-01-19
-
公开(公告)号： US07692272B2公开(公告)日： 2010-04-06
- 发明人: Isamu Asano , Natsuki Sato , Wolodymyr Czubatyj , Jeffrey P. Fournier
- 申请人： Isamu Asano , Natsuki Sato , Wolodymyr Czubatyj , Jeffrey P. Fournier
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L31/0264
- IPC分类号： H01L31/0264
摘要：
A non-volatile memory element comprises a bottom electrode 12; a top electrode 15; and a recording layer 13 containing phase change material and a block layer 14 that can block phase change of the recording layer 13, provided between the bottom electrode 12 and the top electrode 15. The block layer 14 is constituted of material having an electrical resistance that is higher than that of material constituting the recording layer 13. The block layer 14 suppresses the radiation of heat towards the top electrode 15 and greatly limits the phase change region when a write current is applied. The result is a high heating efficiency. The top electrode 15 itself can be used to constitute a bit line, or a separate bit line can be provided.
公开/授权文献
信息查询
IPC分类:
