发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US12132713申请日: 2008-06-04
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公开(公告)号: US07692948B2公开(公告)日: 2010-04-06
- 发明人: Hidehiro Shiga , Daisaburo Takashima
- 申请人: Hidehiro Shiga , Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2007-150077 20070606
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
The sense amp circuit includes a first node given a first, positive constant voltage larger than a fixed potential before reading, a second node given a second, negative constant voltage smaller than the fixed potential before reading, and a third node to be connected to the first and second nodes on reading. A first transistor is connected between the first node and the bit line and operative to turn on when the potential on the bit line becomes smaller than the fixed potential. A second transistor is connected between the second node and the bit line and operative to turn on when the potential on the bit line becomes larger than the fixed potential. A first capacitor is connected between the first node and the fixed potential. A second capacitor is connected between the second node and the fixed potential.
公开/授权文献
- US20080304309A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2008-12-11
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