Invention Grant
US07695890B2 Negative photoresist for silicon KOH etch without silicon nitride
有权
用于无氮化硅的KOH KOH蚀刻用负极光致抗蚀剂
- Patent Title: Negative photoresist for silicon KOH etch without silicon nitride
- Patent Title (中): 用于无氮化硅的KOH KOH蚀刻用负极光致抗蚀剂
-
Application No.: US11470520Application Date: 2006-09-06
-
Publication No.: US07695890B2Publication Date: 2010-04-13
- Inventor: Xing-Fu Zhong , Jyoti K. Malhotra , Chenghong Li
- Applicant: Xing-Fu Zhong , Jyoti K. Malhotra , Chenghong Li
- Applicant Address: US MO Rolla
- Assignee: Brewer Science Inc.
- Current Assignee: Brewer Science Inc.
- Current Assignee Address: US MO Rolla
- Agency: Hovey Williams LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004
Abstract:
New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
Public/Granted literature
- US20070075309A1 NEGATIVE PHOTORESIST FOR SILICON KOH ETCH WITHOUT SILICON NITRIDE Public/Granted day:2007-04-05
Information query
