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1.发明授权公开(公告)号：US07695890B2
公开(公告)日：2010-04-13
申请号：US11470520
申请日：2006-09-06
申请人： Xing-Fu Zhong , Jyoti K. Malhotra , Chenghong Li
发明人： Xing-Fu Zhong , Jyoti K. Malhotra , Chenghong Li
CPC分类号： G03F7/0382 , G03F7/0752 , H01L21/3081 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译： 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯，丙烯腈和含环氧基的单体制备的共聚物。 光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。
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公开(公告)号：US20070075309A1
公开(公告)日：2007-04-05
申请号：US11470520
申请日：2006-09-06
申请人： Xing-Fu Zhong , Jyoti Malhotra , Chenghong Li
发明人： Xing-Fu Zhong , Jyoti Malhotra , Chenghong Li
CPC分类号： G03F7/0382 , G03F7/0752 , H01L21/3081 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译： 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯，丙烯腈和含环氧基的单体制备的共聚物。 光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。
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公开(公告)号：US20130032296A1
公开(公告)日：2013-02-07
申请号：US13196679
申请日：2011-08-02
申请人： Xing-Fu Zhong
发明人： Xing-Fu Zhong
CPC分类号： C11D3/2003 , B08B3/024 , B08B3/04 , B08B3/041 , C11D1/22 , C11D3/43 , C11D11/0047 , Y10T156/1116
摘要： A cleaning composition for removing temporary wafer bonding material is provided. The cleaning composition comprises an alkylarylsulfonic acid and an aliphatic alcohol dispersed or dissolved in a hydrocarbon solvent system. Methods of separating bonded substrates and cleaning debonded substrates using the cleaning composition are also provided. The invention is particularly useful for temporary bonding materials and adhesives. The methods generally comprise contacting the bonding material with the cleaning solution for time periods sufficient to dissolve the desired amount of bonding material for separation and/or cleaning of the substrates.
摘要翻译： 提供一种用于去除临时晶片接合材料的清洁组合物。 清洁组合物包含分散或溶解在烃溶剂系统中的烷基芳基磺酸和脂族醇。 还提供了使用清洁组合物分离粘合的基材和清洁脱粘的基材的方法。 本发明对临时粘合材料和粘合剂特别有用。 所述方法通常包括使结合材料与清洁溶液接触足以溶解所需量的粘合材料以用于分离和/或清洁基底的时间。
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公开(公告)号：US20110171478A1
公开(公告)日：2011-07-14
申请号：US12718516
申请日：2010-03-05
申请人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
发明人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
IPC分类号： C09D145/00 , B32B13/12 , B32B15/08 , B32B27/00 , B32B27/08 , B32B17/10 , G03F7/20 , G03F7/004 , H05K13/00
CPC分类号： B81C1/00801 , B81C2201/053 , C08G61/08 , C08G2261/3324 , C08G2261/418 , G03F7/033 , G03F7/094 , H01L21/0274 , H01L21/3081 , Y10T428/31645 , Y10T428/31667 , Y10T428/31692 , Y10T428/31855 , Y10T428/31909
摘要： New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.
摘要翻译： 提供了在制造半导体和MEMS器件期间使用这些组合物作为保护层的新组合物和方法。 组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可以用于在酸蚀刻和其它加工和处理期间形成保护基材的层。 保护层可以是光敏的或非感光的，并且可以在保护层下面使用或不使用底漆层。 优选的底漆层在溶剂体系中包含碱性聚合物。
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公开(公告)号：US08771927B2
公开(公告)日：2014-07-08
申请号：US12718516
申请日：2010-03-05
申请人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
发明人： Tingji Tang , Gu Xu , Xing-Fu Zhong , Wenbin Hong , Tony D. Flaim , Kimberly Yess , Ramachandran K. Trichur
IPC分类号： G03F7/26
CPC分类号： B81C1/00801 , B81C2201/053 , C08G61/08 , C08G2261/3324 , C08G2261/418 , G03F7/033 , G03F7/094 , H01L21/0274 , H01L21/3081 , Y10T428/31645 , Y10T428/31667 , Y10T428/31692 , Y10T428/31855 , Y10T428/31909
摘要： New compositions and methods of using those compositions as protective layers during the production of semiconductor and MEMS devices are provided. The compositions comprise a cycloolefin copolymer dispersed or dissolved in a solvent system, and can be used to form layers that protect a substrate during acid etching and other processing and handling. The protective layer can be photosensitive or non-photosensitive, and can be used with or without a primer layer beneath the protective layer. Preferred primer layers comprise a basic polymer in a solvent system.
摘要翻译： 提供了在制造半导体和MEMS器件期间使用这些组合物作为保护层的新组合物和方法。 组合物包含分散或溶解在溶剂体系中的环烯烃共聚物，并且可以用于在酸蚀刻和其它加工和处理期间形成保护基材的层。 保护层可以是光敏的或非感光的，并且可以在保护层下面使用或不使用底漆层。 优选的底漆层在溶剂体系中包含碱性聚合物。
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公开(公告)号：US07608342B2
公开(公告)日：2009-10-27
申请号：US11550279
申请日：2006-10-17
申请人： Xing-Fu Zhong
发明人： Xing-Fu Zhong
CPC分类号： H01B1/127 , H01L51/0037 , Y10T428/31507 , Y10T428/31645 , Y10T428/31855 , Y10T428/31909
摘要： Photocurable, conductive, and transparent polymer coating compositions and methods of using the same are provided. The compositions include a photopolymer and an electrically conductive polymer dissolved or dispersed in a solvent system. Preferred photopolymers include water-miscible, multifunctional acrylates. Preferred electrically conductive polymers include poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSS). The compositions preferably also contain a photoinitiator and may contain a water-immiscible acrylate and/or a surfactant. The compositions are applied to substrates and exposed to actinic radiation such as ultraviolet (UV) light to form a cured, durable, conductive, and transparent coating.
摘要翻译： 提供光固化，导电和透明的聚合物涂料组合物及其使用方法。 组合物包括溶解或分散在溶剂体系中的光聚合物和导电聚合物。 优选的光聚合物包括水混溶性多官能丙烯酸酯。 优选的导电聚合物包括聚（3,4-亚乙基二氧噻吩）/聚（苯乙烯磺酸盐）（PEDOT-PSS）。 组合物优选还含有光引发剂并且可以含有不与水混溶的丙烯酸酯和/或表面活性剂。 将组合物施加到基底上并暴露于光化辐射如紫外（UV）光下以形成固化的，耐久的，导电的和透明的涂层。
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公开(公告)号：US09263314B2
公开(公告)日：2016-02-16
申请号：US13198294
申请日：2011-08-04
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
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公开(公告)号：US20140162034A2
公开(公告)日：2014-06-12
申请号：US13198294
申请日：2011-08-04
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
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公开(公告)号：US20120034437A1
公开(公告)日：2012-02-09
申请号：US13198294
申请日：2011-08-04
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
摘要翻译： 提供临时连接半导体衬底的多个结合层方案。 在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。 本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。 更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能 正面的缺陷。
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10.发明授权Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride 有权不含氮化硅的硅湿蚀刻用耐碱性负性光致抗蚀剂公开(公告)号：US07709178B2
公开(公告)日：2010-05-04
申请号：US11736429
申请日：2007-04-17
申请人： Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
发明人： Xing-Fu Zhong , Tony D. Flaim , Jyoti Malhotra
CPC分类号： G03F7/0752 , G03F7/0045 , G03F7/0382 , G03F7/0751 , Y10S430/108 , Y10S430/115
摘要： New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes a first polymer prepared from a styrene and an acrylonitrile, and a second polymer comprising epoxy-containing monomers (and preferably phenolic-containing monomers). The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
摘要翻译： 提供了在制造半导体和MEMS器件期间使用的新型光致抗蚀剂。 底漆层优选包含溶解或分散在溶剂体系中的硅烷。 光致抗蚀剂层包括由苯乙烯和丙烯腈制备的第一聚合物和包含含环氧单体（优选含酚单体）的第二聚合物。 光致抗蚀剂层包括光致酸发生剂，并且优选为负性作用。
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