发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
-
申请号： US11600068申请日： 2006-11-16
-
公开(公告)号： US07696099B2公开(公告)日： 2010-04-13
- 发明人: Masaru Yamada , Akihiko Tsudumitani
- 申请人： Masaru Yamada , Akihiko Tsudumitani
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2005-335782 20051121
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
公开/授权文献
- US20070196965A1 Manufacturing method of semiconductor device 公开/授权日：2007-08-23
信息查询
IPC分类:
