发明授权
- 专利标题： Flash memory device
- 专利标题（中）： 闪存设备
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申请号： US11942227申请日： 2007-11-19
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公开(公告)号： US07696554B2公开(公告)日： 2010-04-13
- 发明人: Sang Hyun Oh , Hee Hyun Chang , Hee Youl Lee
- 申请人： Sang Hyun Oh , Hee Hyun Chang , Hee Youl Lee
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： KR2005-57790 20050630
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A flash memory device and method of fabricating the same, wherein a width at the top of a floating gate is narrower than that at the bottom of the floating gate. The area of the floating gate can be reduced while maintaining the overlap area between the control gate and the floating gate. Therefore, inter-cell interference can be reduced without lowering program speed.
公开/授权文献
- US20080061353A1 Flash Memory Device 公开/授权日：2008-03-13
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