发明授权
- 专利标题： Cobal disilicide structure
- 专利标题（中）： 钴二硅化物结构
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申请号： US12175549申请日： 2008-07-18
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公开(公告)号： US07696586B2公开(公告)日： 2010-04-13
- 发明人: David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
- 申请人： David Paul Agnello , Mary Conroy Bushey , Donna K. Johnson , Jerome Brett Lasky , Peter James Lindgren , Kirk David Peterson
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Schmeiser, Olsen & Watts
- 代理商 Richard M. Kotulak
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/28
摘要：
A structure. The structure may include a layer of cobalt disilicide that is substantially free of cobalt monosilicide and there is substantially no stringer of an oxide of titanium on the layer of cobalt disilicide. The structure may include a substrate that includes: an insulated-gate field effect transistor (FET) that includes a source, a drain, and a gate; a first layer of cobalt disilicide on the source, said first layer having substantially no cobalt monosilicide, and said first layer having substantially no stringer of an oxide of titanium thereon; a second layer of cobalt disilicide on the drain, said second layer having substantially no cobalt monosilicide having substantially no stringer of an oxide of titanium thereon; and a third layer of cobalt disilicide on the gate, said third layer having substantially no cobalt monosilicide and having substantially no stringer of an oxide of titanium thereon.
公开/授权文献
- US20080296706A1 COBALT DISILICIDE STRUCTURE 公开/授权日：2008-12-04
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