发明授权
- 专利标题： Oxide-like seasoning for dielectric low k films
- 专利标题（中）： 电介质低k薄膜的氧化物调味料
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申请号： US11424723申请日： 2006-06-16
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公开(公告)号： US07700486B2公开(公告)日： 2010-04-20
- 发明人: Sohyun Park , Wen H. Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
- 申请人： Sohyun Park , Wen H. Zhu , Tzu-Fang Huang , Li-Qun Xia , Hichem M'Saad
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; G01F7/00
摘要：
A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.
公开/授权文献
- US20060219175A1 OXIDE-LIKE SEASONING FOR DIELECTRIC LOW K FILMS 公开/授权日：2006-10-05
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