发明授权
- 专利标题： Structure and fabrication of field-effect transistor for alleviating short-channel effects
- 专利标题（中）： 用于减轻短沟道效应的场效晶体管的结构和制造
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申请号： US11975278申请日： 2007-10-17
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公开(公告)号： US07700980B1公开(公告)日： 2010-04-20
- 发明人: Constantin Bulucea , Fu-Cheng Wang , Prasad Chaparala
- 申请人： Constantin Bulucea , Fu-Cheng Wang , Prasad Chaparala
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Ronald J. Meetin
- 主分类号： H01L31/112
- IPC分类号： H01L31/112
摘要：
Each of a pair of like-polarity IGFETs (40 or 42 and 240 or 242) has a channel zone (64 or 84) situated in body material (50). Short-channel effects are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (60 and 62 or 80 and 82) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.4 μm deep into the body material. A pocket portion (100/102 or 104) extends along both source drain zones of one of the IGFETs. A pocket portion (244 or 246) extends largely along only one of the source/drain zones of the other IGFET so that it is an asymmetrical device.
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