发明授权
- 专利标题: Electrostatic discharge protection
- 专利标题(中): 静电放电保护
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申请号: US12023181申请日: 2008-01-31
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公开(公告)号: US07701682B2公开(公告)日: 2010-04-20
- 发明人: Abhijat Goyal , Chai Ean E. Gill , James D. Whitfield
- 申请人: Abhijat Goyal , Chai Ean E. Gill , James D. Whitfield
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductors, Inc.
- 当前专利权人: Freescale Semiconductors, Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Ingrassia, Fisher & Lorenz, P.C.
- 主分类号: H02H9/00
- IPC分类号: H02H9/00 ; H02H3/22
摘要:
An electrostatic discharge (ESD) protection device (61, 71), coupled across input-output (I/O) (22) and common (23) terminals of a core circuit (24) that it is intended to protect from ESD events, comprises, multiple serially coupled ESD clamp stages (41, 41′), each stage (41, 41′) comprising an interior node (52, 52′) and first (32, 32′) and second terminal (42, 42′) nodes wherein the first terminal node (42) of the first clamp stage (41) is coupled to the common terminal (23) and the second terminal node (42′) of the last clamp stages (41′) is coupled to the I/O terminals (22). A resistance-capacitance ladder (60) is provided in parallel with some of the clamp stages (41, 41′), with a resistance (R1, R2, R3 etc.) coupled to each of the nodes (32, 52, 65 (42; 32′)) of one of the ESD clamp stages (41, 41′) by first terminals thereof and capacitors (C1, C2, etc.) are coupled between second terminals of the resistances (R1, R2, R3 etc.). The clamp stages (41, 41′) are desirably bi-directional and a diode (D1) may bridge one or more of the clamp stages (e.g., 41) to provide different clamp voltages for different polarity ESD events.
公开/授权文献
- US20090195944A1 ELECTROSTATIC DISCHARGE PROTECTION 公开/授权日:2009-08-06
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