发明授权
- 专利标题: Phase change random access memory device and related methods of operation
- 专利标题(中): 相变随机存取存储器件及相关操作方法
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申请号: US11834845申请日: 2007-08-07
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公开(公告)号: US07701757B2公开(公告)日: 2010-04-20
- 发明人: Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
- 申请人: Hye-jin Kim , Kwang-jin Lee , Du-eung Kim
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electroncis Co., Ltd.
- 当前专利权人: Samsung Electroncis Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2006-0083544 20060831
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A method of operating a phase change random access memory (PRAM) device comprises performing a program operation to store data in selected PRAM cells of the device, wherein the program operation comprises a plurality of sequential program loops. The method further comprises suspending the program operation in the middle of the program operation, and after suspending the program operation, resuming the program operation in response to a resume command.
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