摘要:
A storage device is provided. The storage device includes: a nonvolatile memory including memory cells divided into first and second memory cell groups; a memory controller; and a physically unclonable function (PUF) circuit configured to generate PUF data, based on an output of the second memory cell group, by excluding, from the output of the second memory cell group, outputs of a first exclusion area, a second exclusion area, and a third exclusion area, The first exclusion area has a threshold voltage equal to or greater than a first read level and less than a second read level, the second exclusion area has a threshold voltage less than a third read level that is less than the first read level, and the third exclusion area has a threshold voltage equal to or greater than a fourth read level that is greater than the second read level.
摘要:
A storage device may include a plurality of memory cells arranged in pages and blocks, each page including a row of memory cells, and each block including a plurality of pages of memory cells. The storage device may include a memory device, such as a nonvolatile memory device, which includes these items. A data recovery method for the storage device may include receiving by the storage device a first command corresponding to a first selected data recovery scheme. Based on the first command: a first target page scheme for performing error detection on the plurality of blocks is applied, target pages are read using the first target page scheme, and an amount of errors in each read target page is detected. In addition, it may be determined that a target page of a first block has at least a first threshold amount of errors, and based on the determination, data recovery for the first block may be performed by relocating all data stored in the first block to another block. Further, it may be determined that no read page in a second block has at least the first threshold amount of errors, and as a result, the data stored in the second block can be maintained.
摘要:
A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.
摘要:
A channel scanning method and system at an MP within a mesh network associated with a local network are provided. A MAP sends a local management frame including information about a mesh network on an allocated local channel and sends a mesh management frame on a mesh channel indicated by the mesh network information. An MP scans a plurality of channels including the local channel and the mesh channel in an order of channels numbers, receives the local management frame by scanning the local channel, and receives the mesh management frame by scanning the mesh channel based on the mesh network information of the local management frame.
摘要:
Disclosed are a scanner and an image forming apparatus employing the same. The scanner may produce bidirectional scanning of light by oscillating a deflecting mirror about a first axis substantially parallel to the mirror surface, and may compensate for skewing of the scan lines by rotating the mirror about a second axis that is substantially perpendicular to the first axis so as to allow the light to be scanned at an angle.
摘要:
For sensing a target temperature, first and second temperature detectors generate first and second delay signals having negative and positive delay changes with temperature. A comparator senses the target temperature from the first and second delay signals such as by activating an output signal when the temperature is at least the target temperature.
摘要:
A method of fabricating an a non-volatile memory includes forming trench isolation regions in an inactive region of a semiconductor substrate, adjacent trench isolation regions defining respective protrusions having rounded edges therebetween, wherein upper surfaces of the trench isolation regions are lower than an upper surface of the semiconductor substrate and wherein the protrusions define an active region, forming a tunnel insulating layer covering the protrusion of the semiconductor substrate, and forming, sequentially, a storage layer, a blocking insulating layer, and a gate layer covering the tunnel insulating layer.
摘要:
A packaged integrated circuit device includes a substrate, and a conductive pad and a chip stack on the substrate. A primary conductive line electrically connects the pad on the substrate to a conductive pad on one of the chips in the chip stack. Secondary conductive lines electrically connect the pad on the one of the chips to respective conductive pads on ones of the chips above and below the one of the chips in the chip stack. The primary conductive line may be configured to transmit a signal from the pad on the substrate to the pad on the one of the chips in the chip stack, and the secondary conductive lines may be configured to transmit the signal from the one of the chips to the ones of the chips thereabove and therebelow at a same time.
摘要:
A memory device having a vertical channel structure is disclosed. The memory device includes a plurality of gate lines extending substantially parallel to one another along a surface of a substrate, and a connection unit electrically connecting the plurality of gate lines. The connection unit includes a first portion laterally extending along the surface of the substrate, a second portion extending substantially perpendicular to the surface of the substrate, and a supporting insulating layer extending in a cavity defined by the first and second portions of the connection unit. Related fabrication methods are also discussed.