Invention Grant
US07704760B2 Method of making light emitting diode with irregular surface and independent valleys
有权
制造具有不规则表面和独立谷的发光二极管的方法
- Patent Title: Method of making light emitting diode with irregular surface and independent valleys
- Patent Title (中): 制造具有不规则表面和独立谷的发光二极管的方法
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Application No.: US12231164Application Date: 2008-08-29
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Publication No.: US07704760B2Publication Date: 2010-04-27
- Inventor: Chuan-Cheng Tu , Pao-I Huang , Jen-Chau Wu
- Applicant: Chuan-Cheng Tu , Pao-I Huang , Jen-Chau Wu
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Kinney & Lange, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.
Public/Granted literature
- US20090029492A1 Method of making light emitting diode Public/Granted day:2009-01-29
Information query
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