公开(公告)号：US07435604B2

公开(公告)日：2008-10-14

申请号：US10957738

申请日：2004-10-04

申请人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

发明人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

摘要翻译： 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US07391061B2

公开(公告)日：2008-06-24

申请号：US11316461

申请日：2005-12-22

申请人： Yuh-Ren Shieh ,  Jen-Chau Wu ,  Chuan-Cheng Tu

发明人： Yuh-Ren Shieh ,  Jen-Chau Wu ,  Chuan-Cheng Tu

IPC分类号： H01L23/373

CPC分类号： H01L33/0079 ,  H01L33/382 ,  H01L33/641

摘要： A light emitting diode and the method of the same are provided. The light emitting diode includes a substrate, a thermal spreading layer, a connecting layer and an epitaxial structure. The substrate is selected from a transparent substrate or a non-transparent substrate, which corresponds to different materials of the connecting layers respectively. The thermal spreading layer, configured to improve the thermal conduction of the light emitting diode, is selected from diamond, impurity-doped diamond or diamond-like materials.

摘要翻译： 提供一种发光二极管及其制造方法。 发光二极管包括衬底，热扩散层，连接层和外延结构。 基板选自透明基板或非透明基板，其分别对应于连接层的不同材料。 被配置为改善发光二极管的热传导的热扩散层选自金刚石，杂质掺杂的金刚石或类金刚石材料。

公开(公告)号：US20070278496A1

公开(公告)日：2007-12-06

申请号：US11733778

申请日：2007-04-11

申请人： Yuh-Ren Shieh ,  Chuan-Cheng Tu ,  Jen-Chau Wu

发明人： Yuh-Ren Shieh ,  Chuan-Cheng Tu ,  Jen-Chau Wu

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting diode is disclosed. The light emitting diode includes a substrate, a thermal spreading layer disposed on the bottom of the substrate, a soldering layer disposed on the bottom of the thermal spreading layer, a barrier layer disposed between the thermal spreading layer and the soldering layer, and a light emitting layer disposed on top of the substrate.

摘要翻译： 公开了一种发光二极管。 发光二极管包括基板，设置在基板底部的热扩散层，设置在热扩散层底部的焊接层，设置在热扩散层和焊接层之间的阻挡层，以及光 发光层设置在基板的顶部。

公开(公告)号：US06570191B2

公开(公告)日：2003-05-27

申请号：US10026794

申请日：2001-12-27

申请人： Yoshiyuki Mizuno ,  Masumi Hirotani ,  Terence Edward Sale ,  Chuan-Cheng Tu

发明人： Yoshiyuki Mizuno ,  Masumi Hirotani ,  Terence Edward Sale ,  Chuan-Cheng Tu

IPC分类号： H01L3300

CPC分类号： H01L33/105 ,  H01L33/06 ,  H01L33/145 ,  H01L33/30 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/18383 ,  H01S5/3211

摘要： A surface-light-emitting device including a semiconductor substrate, and a laminar semiconductor structure consisting of a plurality of semiconductor layers formed by epitaxial growth on the semiconductor substrate, the laminar semiconductor structure including a light-generating layer, and two multi-film reflecting layers between which the light-generating layer is interposed and which constitute a light resonator for reflecting a light generated by the light-generating layer, the structure having a light-emitting surface at one of opposite ends thereof remote from the substrate, so that the light generated by the light-generating layer is emitted from the light-emitting surface, wherein the two multi-film reflecting layers consist of a first multi-film reflecting layer formed principally of AlGaInP on the substrate, and a second multi-film reflecting layer formed principally of AlGaAs on one of opposite sides of the light-generating layer which is remote from the substrate.

摘要翻译： 一种表面发光器件，包括半导体衬底和由在半导体衬底上外延生长形成的多个半导体层的层状半导体结构，包括发光层的层状半导体结构和两个多膜反射 其间插入有发光层，并且构成用于反射由发光层产生的光的光谐振器，该结构在其远离基板的相对端的一端具有发光表面，使得 由发光层产生的光从发光面发射，其中两个多层反射层由在基板上的主要由AlGaInP形成的第一多层膜反射层和第二多层反射层 主要由AlGaAs形成在远离基板的发光层的相对两侧。

公开(公告)号：US08101959B2

公开(公告)日：2012-01-24

申请号：US12893181

申请日：2010-09-29

申请人： Jin-Ywan Lin ,  Chuan-Cheng Tu

发明人： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/0079 ,  H01L33/382

摘要： An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate.

摘要翻译： 本发明的实施例公开了一种包括第一多层结构的发光器件，包括第一下层; 第一上层; 以及第一有源层，其能够在偏置电压下发光并且定位在所述第一下层和所述第一上层之间; 与所述第一多层结构相邻的第二厚层; 与第二厚层相关联的第二连接层; 电连接到第二连接层和第一多层结构的连接线; 底物; 以及在第一多层结构和衬底之间的两个或更多个欧姆接触电极。

公开(公告)号：US07704760B2

公开(公告)日：2010-04-27

申请号：US12231164

申请日：2008-08-29

申请人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

发明人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

摘要翻译： 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US20070090377A1

公开(公告)日：2007-04-26

申请号：US11550332

申请日：2006-10-17

申请人： Jin-Ywan Lin ,  Chuan-Cheng Tu

发明人： Jin-Ywan Lin ,  Chuan-Cheng Tu

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/0079 ,  H01L33/382

摘要： A light emitting device includes a substrate and an adhesive layer on the substrate. At least two multi-layer epitaxial structures are on the substrate. Each structure sequentially includes an upper cladding layer, an active layer, a lower cladding layer, an ohmic contact epitaxial layer, and a first ohmic contact electrode adhered to the substrate by the adhesive layer. A second ohmic contact electrode is on the lower cladding layer. A channel divides the active layer into two portions. A first electrode is on the lower cladding layer corresponding to a first portion of the active layer. A second electrode is on the second ohmic contact electrode corresponding to a second portion of the active layer. A connection layer is formed in the structure so as to couple the first electrode with the first ohmic contact electrode. A dielectric layer is between these two structures. A conductive line couples the electrodes of these two structures.

摘要翻译： 发光器件包括衬底和衬底上的粘合剂层。 衬底上至少有两层多层外延结构。 每个结构依次包括上包层，有源层，下包层，欧姆接触外延层和通过粘合层粘附到基板的第一欧姆接触电极。 第二欧姆接触电极在下包层上。 A通道将有源层分为两部分。 第一电极在对应于有源层的第一部分的下包层上。 第二电极位于对应于有源层的第二部分的第二欧姆接触电极上。 在结构中形成连接层，以便将第一电极与第一欧姆接触电极耦合。 电介质层位于这两个结构之间。 导线连接这两个结构的电极。

公开(公告)号：US07192797B2

公开(公告)日：2007-03-20

申请号：US11249680

申请日：2005-10-12

申请人： Chuan-Cheng Tu ,  Jen-Chau Wu ,  Yuh-Ren Shieh

发明人： Chuan-Cheng Tu ,  Jen-Chau Wu ,  Yuh-Ren Shieh

IPC分类号： H01L21/00

CPC分类号： H01L33/385 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer.

摘要翻译： 提供了包括发光结构，第一介电层，第一金属层，第二金属层和第二介电层的倒装LED。 发光结构包括第一导电层，有源层和第二导电层。 有源层设置在第一导电层上，第二导电层设置在有源层上。 第一金属层设置在发光结构上并与第一导电层接触，第一金属层的一部分设置在第一介电层上。 第二金属层设置在发光结构上并与第二导电层接触，第二金属层的一部分设置在第一介电层上。 第二电介质层设置在第一电介质层上。

公开(公告)号：US07154149B2

公开(公告)日：2006-12-26

申请号：US10791709

申请日：2004-03-04

申请人： Jen-Chau Wu ,  Cheng-Chung Yang ,  Rong-Yih Hwang ,  Chuan-Cheng Tu

发明人： Jen-Chau Wu ,  Cheng-Chung Yang ,  Rong-Yih Hwang ,  Chuan-Cheng Tu

IPC分类号： H01L23/62

CPC分类号： H01L27/0288 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention relates to an ESD protection configuration and method for light emitting diodes (LED), including an LED an LED, having a p-n junction and connected to a circuit substrate, the circuit substrate having two p-type substrates and one n-type substrate therein; a first ESD protection configuration, built-in the circuit substrate and including a first resistor, a first capacitor and a first diode that are connected in series and then engage a parallel connection with the LED, wherein the first diode has a p-node connected to an n-node of the LED; and a second ESD protection configuration, built-in the circuit substrate and including a second resistor, a second capacitor and a second diode that are connected in series and then engage a parallel connection with the LED and the first ESD protection configuration, wherein the second diode has a p-node connected to the p-node of the LED, whereby such a configuration absorbs and removes ESD induced upon human contact and prevents the LED from burning to effectively extend the lifespan of the LED.

摘要翻译： 本发明涉及一种发光二极管（LED）的ESD保护配置和方法，包括具有pn结并连接到电路基板的LED的LED，该电路基板具有两个p型基板和一个n型基板 其中 第一ESD保护配置，内置电路基板，并且包括串联连接并然后与LED并联的第一电阻器，第一电容器和第一二极管，其中第一二极管具有p节点连接 到LED的n节点; 以及第二ESD保护配置，其内置所述电路基板并且包括串联连接并且然后与所述LED和所述第一ESD保护配置的并联连接的第二电阻器，第二电容器和第二二极管，其中所述第二电阻器 二极管具有连接到LED的p节点的p节点，由此这种配置吸收和去除人接触时引起的ESD，并且防止LED燃烧以有效地延长LED的寿命。

公开(公告)号：US20060284191A1

公开(公告)日：2006-12-21

申请号：US11454951

申请日：2006-06-15

申请人： Cheng Yang ,  Charng-Shyang Jong ,  Chuan-Cheng Tu ,  Kau-Feng Jan ,  Jen-Chau Wu

发明人： Cheng Yang ,  Charng-Shyang Jong ,  Chuan-Cheng Tu ,  Kau-Feng Jan ,  Jen-Chau Wu

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： A light emitting diode includes a light emitting structure, a heterojunction, a first electrode, and a second electrode. The light emitting structure has a top surface where the first electrode and the second electrode are positioned thereon. The heterojunction is in the light emitting structure and includes a first semiconductor layer and a second semiconductor layer of differently doped types. The first semiconductor layer has a boundary and is electrically connected to the first electrode. The first electrode includes at least two wire-bonding pads. A smallest horizontal distance (d) between a center of the first electrode and the boundary is in a range of about 89 μm to 203 μm. The second electrode is electrically connected to the second semiconductor layer and includes an outer arm, which peripherally encompasses the top surface.

摘要翻译： 发光二极管包括发光结构，异质结，第一电极和第二电极。 发光结构具有第一电极和第二电极位于其上的顶表面。 异质结在发光结构中，并且包括第一半导体层和不同掺杂类型的第二半导体层。 第一半导体层具有边界并与第一电极电连接。 第一电极包括至少两个引线接合焊盘。 第一电极的中心与边界之间的最小水平距离（d）在约89μm至203μm的范围内。 第二电极电连接到第二半导体层，并且包括外臂，外臂包围顶表面。