发明授权
US07704873B1 Protective self-aligned buffer layers for damascene interconnects
有权
用于大马士革互连的保护性自对准缓冲层
- 专利标题： Protective self-aligned buffer layers for damascene interconnects
- 专利标题（中）： 用于大马士革互连的保护性自对准缓冲层
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申请号： US11726363申请日： 2007-03-20
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公开(公告)号： US07704873B1公开(公告)日： 2010-04-27
- 发明人: Yongsik Yu , Mandyam Sriram , Roey Shaviv , Kaushik Chattopadhyay , Hui-Jung Wu
- 申请人： Yongsik Yu , Mandyam Sriram , Roey Shaviv , Kaushik Chattopadhyay , Hui-Jung Wu
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.
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