公开(公告)号：US07727881B1

公开(公告)日：2010-06-01

申请号：US11709293

申请日：2007-02-20

Applicant: Kaushik Chattopadhyay ,  Bart van Schravendijk

Inventor： Kaushik Chattopadhyay ,  Bart van Schravendijk

IPC: H01L21/4763

CPC classification number: H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

Abstract translation: 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

公开(公告)号：US08124522B1

公开(公告)日：2012-02-28

申请号：US12082496

申请日：2008-04-11

Applicant: Hui-Jung Wu ,  Kimberly Shafi ,  Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Girish Dixit ,  Bart van Schravendijk ,  Elizabeth Apen

Inventor： Hui-Jung Wu ,  Kimberly Shafi ,  Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Girish Dixit ,  Bart van Schravendijk ,  Elizabeth Apen

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53295 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are methods of stabilizing an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer. Methods include modulating the optical properties reduces the effects of UV radiation on the dielectric diffusion barrier layer. The dielectric diffusion barrier can be made to absorb less UV radiation. A dielectric layer with UV absorbing properties may also be added on top of the diffusion barrier layer so less UV is transmitted. Both methods result in reduced interaction between UV radiation and the dielectric diffusion barrier.

Abstract translation: 提供了在沉积期间稳定底层电介质扩散阻挡层的方法，以及覆盖介电层的紫外线（UV）处理。 方法包括调制光学特性降低了UV辐射对介电扩散阻挡层的影响。 可以使电介质扩散阻挡层吸收较少的UV辐射。 具有UV吸收特性的电介质层也可以添加到扩散阻挡层的顶部，因此传输较少的UV。 两种方法都会降低紫外线辐射与介电扩散阻挡层之间的相互作用。

公开(公告)号：US08317923B1

公开(公告)日：2012-11-27

申请号：US12762223

申请日：2010-04-16

Applicant: Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

Inventor： Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

Abstract translation: 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

公开(公告)号：US07727880B1

公开(公告)日：2010-06-01

申请号：US11709294

申请日：2007-02-20

Applicant: Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

Inventor： Kaushik Chattopadhyay ,  Bart van Schravendijk ,  Yongsik Yu ,  Mandyam Sriram

IPC: H01L21/4763

CPC classification number: H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

公开(公告)号：US20130323930A1

公开(公告)日：2013-12-05

申请号：US13482786

申请日：2012-05-29

Applicant: Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

Inventor： Kaushik Chattopadhyay ,  George A. Antonelli ,  Pramod Subramonium ,  Mandyam Sriram ,  Tighe A. Spurlin

IPC: H01L21/02

CPC classification number: H01L21/02107 ,  H01L21/02074 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883

Abstract: Provided are methods and systems for forming air gaps in an interconnect layer between adjacent conductive lines. Protective layers may be selectively formed on exposed surfaces of the conductive lines, while structures in between the lines may remain unprotected. These structures may be made from a sacrificial material that is later removed to form voids. In certain embodiments, the structures are covered with a permeable non-protective layer that allows etchants and etching products to pass through during removal. When a work piece having a selectively formed protective layer is exposed to gas or liquid etchants, these etchants remove the sacrificial material without etching or otherwise impacting the metal lines. Voids formed in between these lines may be then partially filled with a dielectric material to seal the voids and/or protect sides of the metal lines. Additional interconnect layers may be formed above the processed layer containing air gaps.

Abstract translation: 提供了用于在相邻导电线之间的互连层中形成气隙的方法和系统。 可以在导电线的暴露表面上选择性地形成保护层，而线之间的结构可以保持不受保护。 这些结构可以由稍后去除以形成空隙的牺牲材料制成。 在某些实施方案中，结构被可渗透的非保护层覆盖，其允许蚀刻剂和蚀刻产物在去除期间通过。 当具有选择性形成的保护层的工件暴露于气体或液体蚀刻剂时，这些蚀刻剂在不蚀刻或以其他方式冲击金属线的情况下去除牺牲材料。 然后可以在这些线之间形成的空隙部分地填充有电介质材料以密封空隙和/或保护金属线的侧面。 附加的互连层可以形成在包含气隙的处理层之上。

公开(公告)号：US08430992B1

公开(公告)日：2013-04-30

申请号：US12763545

申请日：2010-04-20

Applicant: Kaushik Chattopadhyay ,  Bart van Schravendijk

Inventor： Kaushik Chattopadhyay ,  Bart van Schravendijk

IPC: C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC classification number: H01L21/76886 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride.

Abstract translation: 保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面选择性地形成的材料层。 在镶嵌互连中，PSAB层通常驻留在金属层和电介质扩散阻挡层之间的界面处。 PSAB层促进了金属层和相邻电介质扩散阻挡层之间的改善的附着力。 此外，PSAB层可以在制造过程中保护金属表面免于无意的氧化。 可以通过例如将金属表面化学转化成金属硅化物的薄层，完全在金属层的顶部内形成PSAB层。 PSAB层的厚度，因此互连电阻可以在形成PSAB层之前通过部分钝化金属表面来控制。 可以通过用含氮化合物可控地处理金属表面以将金属转化为金属氮化物来实现这种钝化。

公开(公告)号：US08173537B1

公开(公告)日：2012-05-08

申请号：US11693617

申请日：2007-03-29

Applicant: Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

Inventor： Kaushik Chattopadhyay ,  Keith Fox ,  Tom Mountsier ,  Hui-Jung Wu ,  Bart van Schravendijk ,  Kimberly Branshaw

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53295 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.

Abstract translation: 沉积期间的底层电介质扩散屏障和上覆介质层的紫外（UV）处理的稳定性对成功整合至关重要。 通过在氢饥饿环境中沉积该层而形成耐UV扩散阻挡层。 扩散阻挡层可以通过在沉积期间或之后的热，等离子体或UV处理更耐紫外线辐射。 降低扩散阻挡层的模量也可以提高耐UV辐射。

公开(公告)号：US08021486B1

公开(公告)日：2011-09-20

申请号：US12693645

申请日：2010-01-26

Applicant: Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

Inventor： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/76849 ,  H01L21/67207 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  Y10S414/139

Abstract: Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.

Abstract translation: 封盖保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面上选择性地形成的材料层。 不仅在金属层的表面，而且在金属线的未曝光部分内形成封装的PSAB层。 例如，封装的PSAB层可以用PSAB材料围绕金属线，从而保护金属线和扩散阻挡层之间的界面。 可以通过用GeH 4处理金属线的暴露表面来形成封装的PSAB层。 可以通过用SiH 4处理金属线的暴露表面来形成封盖PSAB层。 具有含硅封端PSAB层和含锗封装PSAB层的互连器在粘合性，电阻位移和电迁移特性方面提供良好的性能。

公开(公告)号：US07704873B1

公开(公告)日：2010-04-27

申请号：US11726363

申请日：2007-03-20

Applicant: Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

Inventor： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

IPC: H01L21/44

CPC classification number: H01L21/76849 ,  H01L21/67207 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  Y10S414/139

Abstract: Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.

Abstract translation: 封盖保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面上选择性地形成的材料层。 不仅在金属层的表面，而且在金属线的未曝光部分内形成封装的PSAB层。 例如，封装的PSAB层可以用PSAB材料围绕金属线，从而保护金属线和扩散阻挡层之间的界面。 可以通过用GeH 4处理金属线的暴露表面来形成封装的PSAB层。 可以通过用SiH 4处理金属线的暴露表面来形成封盖PSAB层。 具有含硅封端PSAB层和含锗封装PSAB层的互连器在粘合性，电阻位移和电迁移特性方面提供良好的性能。

公开(公告)号：US07576006B1

公开(公告)日：2009-08-18

申请号：US11888323

申请日：2007-07-30

Applicant: Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

Inventor： Yongsik Yu ,  Mandyam Sriram ,  Roey Shaviv ,  Kaushik Chattopadhyay ,  Hui-Jung Wu

IPC: H01L21/44

CPC classification number: H01L21/76849 ,  H01L21/67207 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  Y10S414/139

Abstract: Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating PSAB layers are formed not only at the surface of the metal layers, but also within the unexposed portions of the metal lines. Encapsulating PSAB layer, for example, can surround the metal line with the PSAB material, thereby protecting interfaces between the metal line and diffusion barriers. Encapsulating PSAB layers can be formed by treating the exposed surfaces of metal lines with GeH4. Capping PSAB layers can be formed by treating the exposed surfaces of metal lines with SiH4. Interconnects having both a silicon-containing capping PSAB layer and a germanium-containing encapsulating PSAB layer provide good performance in terms of adhesion, resistance shift, and electromigration characteristics.

Abstract translation: 封盖保护性自对准缓冲层（PSAB）层是在部分制造的半导体器件中在金属层的表面上选择性地形成的材料层。 不仅在金属层的表面，而且在金属线的未曝光部分内形成封装的PSAB层。 例如，封装的PSAB层可以用PSAB材料围绕金属线，从而保护金属线和扩散阻挡层之间的界面。 可以通过用GeH 4处理金属线的暴露表面来形成封装的PSAB层。 可以通过用SiH 4处理金属线的暴露表面来形成封盖PSAB层。 具有含硅封端PSAB层和含锗封装PSAB层的互连器在粘合性，电阻位移和电迁移特性方面提供良好的性能。