发明授权
US07705345B2 High performance strained silicon FinFETs device and method for forming same
有权
高性能应变硅FinFET器件及其形成方法
- 专利标题： High performance strained silicon FinFETs device and method for forming same
- 专利标题（中）： 高性能应变硅FinFET器件及其形成方法
-
申请号： US10751916申请日： 2004-01-07
-
公开(公告)号： US07705345B2公开(公告)日： 2010-04-27
- 发明人: Stephen W. Bedell , Kevin K. Chan , Dureseti Chidambarrao , Silke H. Christianson , Jack O. Chu , Anthony G. Domenicucci , Kam-Leung Lee , Anda C. Mocuta , John A. Ott , Qiqing C. Ouyang
- 申请人： Stephen W. Bedell , Kevin K. Chan , Dureseti Chidambarrao , Silke H. Christianson , Jack O. Chu , Anthony G. Domenicucci , Kam-Leung Lee , Anda C. Mocuta , John A. Ott , Qiqing C. Ouyang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： McGinn IP Law Group PLLC
- 代理商 Louis Percello, Esq.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L31/072
摘要：
A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET.