发明授权
- 专利标题： Semiconductor device and fuse blowout method
- 专利标题（中）： 半导体器件和保险丝熔断法
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申请号： US11425573申请日： 2006-06-21
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公开(公告)号： US07705418B2公开(公告)日： 2010-04-27
- 发明人: Kazushi Kono , Takeshi Iwamoto , Toshiaki Yonezu
- 申请人： Kazushi Kono , Takeshi Iwamoto , Toshiaki Yonezu
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-181617 20050622
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse.
公开/授权文献
- US20060289898A1 SEMICONDUCTOR DEVICE AND FUSE BLOWOUT METHOD 公开/授权日：2006-12-28
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