发明授权
US07705636B2 Buffer circuit which occupies less area in a semiconductor device
失效
在半导体器件中占据较少面积的缓冲电路
- 专利标题: Buffer circuit which occupies less area in a semiconductor device
- 专利标题(中): 在半导体器件中占据较少面积的缓冲电路
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申请号: US11964243申请日: 2007-12-26
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公开(公告)号: US07705636B2公开(公告)日: 2010-04-27
- 发明人: Je Yoon Kim , Jong Chern Lee
- 申请人: Je Yoon Kim , Jong Chern Lee
- 申请人地址: KR Kyoungki-do
- 专利权人: Hynix Semiconductor, Inc.
- 当前专利权人: Hynix Semiconductor, Inc.
- 当前专利权人地址: KR Kyoungki-do
- 代理机构: Ladas & Parry LLP
- 优先权: KR10-2007-0091786 20070910
- 主分类号: H03B1/00
- IPC分类号: H03B1/00
摘要:
The present invention relates to a buffer circuit of a semiconductor memory device, and includes a common bias supply unit and a plurality of interface units having a differential amplifying structure. Each interface unit receives an input signal and differentially amplifies the input signal and a common bias. The common bias supply unit is driven by a reference voltage to provide the common bias signal to each of the interface units. The buffer circuit makes it possible to reduce the area occupied by the buffer circuit in a semiconductor memory device.
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