Invention Grant
- Patent Title: Dual gate oxide device integration
- Patent Title (中): 双栅氧化器器件集成
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Application No.: US11851719Application Date: 2007-09-07
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Publication No.: US07709331B2Publication Date: 2010-05-04
- Inventor: Gauri V. Karve , Srikanth B. Samavedam , William J. Taylor, Jr.
- Applicant: Gauri V. Karve , Srikanth B. Samavedam , William J. Taylor, Jr.
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Kim-Marie Vo; Ranjeev Singh
- Main IPC: H01L21/8234
- IPC: H01L21/8234
Abstract:
A method of forming devices including forming a first region and a second region in a semiconductor substrate is provided. The method further includes forming a semiconductive material over the first region, wherein the semiconductive material has a different electrical property than the first semiconductor substrate, forming a first dielectric material over the first region, depositing a second dielectric material over the first dielectric material and over the second region, wherein the second dielectric material is different than the first dielectric material, and depositing a gate electrode material over the high dielectric constant material. In one embodiment, the semiconductive material is silicon germanium and the semiconductor substrate is silicon.
Public/Granted literature
- US20090068807A1 DUAL GATE OXIDE DEVICE INTEGRATION Public/Granted day:2009-03-12
Information query
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