发明授权
- 专利标题: Methods of shaping vertical single crystal silicon walls and resulting structures
- 专利标题(中): 垂直单晶硅壁和结构的垂直方法
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申请号: US11445544申请日: 2006-06-02
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公开(公告)号: US07709341B2公开(公告)日: 2010-05-04
- 发明人: Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
- 申请人: Janos Fucsko , David H. Wells , Patrick Flynn , Whonchee Lee
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: TraskBritt
- 主分类号: H01L21/20
- IPC分类号: H01L21/20
摘要:
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
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