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US07709341B2 Methods of shaping vertical single crystal silicon walls and resulting structures 有权
垂直单晶硅壁和结构的垂直方法

Methods of shaping vertical single crystal silicon walls and resulting structures
摘要:
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic etchant that undercuts the single crystal silicon. By controlling the length of the etch, single crystal silicon islands or smooth vertical walls in the single crystal silicon may be created.
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