发明授权
US07709391B2 Methods for in-situ generation of reactive etch and growth specie in film formation processes
有权
在膜形成过程中原位产生反应性蚀刻和生长物质的方法
- 专利标题： Methods for in-situ generation of reactive etch and growth specie in film formation processes
- 专利标题（中）： 在膜形成过程中原位产生反应性蚀刻和生长物质的方法
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申请号： US11336178申请日： 2006-01-20
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公开(公告)号： US07709391B2公开(公告)日： 2010-05-04
- 发明人: Satheesh Kuppurao , David K. Carlson , Howard Beckford , Errol Sanchez
- 申请人： Satheesh Kuppurao , David K. Carlson , Howard Beckford , Errol Sanchez
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Diehl Servilla, LLC
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
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