发明授权
- 专利标题: Method of manufacturing silicon carbide semiconductor device
- 专利标题(中): 制造碳化硅半导体器件的方法
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申请号: US11976217申请日: 2007-10-23
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公开(公告)号: US07713805B2公开(公告)日: 2010-05-11
- 发明人: Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
- 申请人: Hiroki Nakamura , Hiroyuki Ichikawa , Eiichi Okuno
- 申请人地址: JP Kariya
- 专利权人: DENSO CORPORATION
- 当前专利权人: DENSO CORPORATION
- 当前专利权人地址: JP Kariya
- 代理机构: Posz Law Group, PLC
- 优先权: JP2006-294157 20061030
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/8234
摘要:
A method of manufacturing a silicon carbide semiconductor device having a MOS structure includes preparing a substrate made of silicon carbide, and forming a channel region, a first impurity region, a second impurity region, a gate insulation layer, and a gate electrode to form a semiconductor element on the substrate. In addition, a film is formed on the semiconductor element to provide a material of an interlayer insulation layer, and a reflow process is performed at a temperature about 700° C. or over in an wet atmosphere so that the interlayer insulation layer is formed from the film and an edge portion of the gate electrode is rounded and oxidized.