Small feature integrated circuit fabrication

Invention Grant

US07713824B2 Small feature integrated circuit fabrication 有权

Title translation: 小功能集成电路制造

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Patent Title: Small feature integrated circuit fabrication
Patent Title (中): 小功能集成电路制造
Application No.: US11677206

Application Date: 2007-02-21
Publication No.: US07713824B2

Publication Date: 2010-05-11
Inventor: Chandrasekhar Sarma , Alois Gutmann , Sajan Marokkey , Josef Maynollo
Applicant: Chandrasekhar Sarma , Alois Gutmann , Sajan Marokkey , Josef Maynollo
Applicant Address: US CA San Jose
Assignee: Infineon Technologies North America Corp.
Current Assignee: Infineon Technologies North America Corp.
Current Assignee Address: US CA San Jose
Agency: Saul Ewing LLP
Main IPC: H01L21/8236
IPC: H01L21/8236 ; H01L21/00

Small feature integrated circuit fabrication

Abstract:

A method for controlling etching during photolithography in the fabrication of an integrated circuit in connection with first and second features that are formed on the integrated circuit having a gap there between comprising depositing a layer of photoresist on the integrated circuit, selectively exposing portions of the photoresist through at least one photolithography mask having a pattern including means for alleviating line end shortening of the first and second lines adjacent the gap, and developing the photoresist after the selective exposing step.

Abstract(Chinese):

一种用于在制造集成电路的第一和第二特征的集成电路的制造中控制蚀刻的方法，所述第一和第二特征形成在其上具有间隙的集成电路上，包括在集成电路上沉积光致抗蚀剂层，选择性地暴露部分光致抗蚀剂通过至少一个具有图案的光刻掩模，该图案包括用于减轻邻近间隙的第一和第二线的线端缩短的装置，以及在选择性曝光步骤之后显影光致抗蚀剂。

Public/Granted literature

US20080199784A1 Small Feature Integrated Circuit Fabrication Public/Granted day:2008-08-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8236	........增强型和耗尽型晶体管的组合