发明授权
US07714376B2 Non-volatile memory device with polysilicon spacer and method of forming the same
有权
具有多晶硅间隔物的非易失性存储器件及其形成方法
- 专利标题: Non-volatile memory device with polysilicon spacer and method of forming the same
- 专利标题(中): 具有多晶硅间隔物的非易失性存储器件及其形成方法
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申请号: US11612500申请日: 2006-12-19
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公开(公告)号: US07714376B2公开(公告)日: 2010-05-11
- 发明人: Tzyh-Cheang Lee , Jiunn-Ren Hwang , Tsung-Lin Lee
- 申请人: Tzyh-Cheang Lee , Jiunn-Ren Hwang , Tsung-Lin Lee
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Thomas, Kayden, Horstemeyer & Risley
- 主分类号: H01L29/788
- IPC分类号: H01L29/788
摘要:
Non-volatile memory device with polysilicon spacer and method of forming the same. A dielectric layer lines a sidewall of a polysilicon gate. A polysilicon spacer is patterned on the dielectric layer adjacent to the sidewall of the polysilicon gate. A protection spacer is patterned on the dielectric layer and disposed on the polysilicon spacer adjacent to the sidewall of the conductive gate for preventing a shortage path between the polysilicon gate and the polysilicon spacer during a subsequent silicidation process.