Invention Grant
US07714414B2 Method and apparatus for polymer dielectric surface recovery by ion implantation
有权
通过离子注入进行聚合物电介质表面回收的方法和装置
- Patent Title: Method and apparatus for polymer dielectric surface recovery by ion implantation
- Patent Title (中): 通过离子注入进行聚合物电介质表面回收的方法和装置
-
Application No.: US10998423Application Date: 2004-11-29
-
Publication No.: US07714414B2Publication Date: 2010-05-11
- Inventor: Hsiu-Mei Yu , Ken-Shen Chou , Shun-Liang Hsu
- Applicant: Hsiu-Mei Yu , Ken-Shen Chou , Shun-Liang Hsu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW
- Agency: Duane Morris LLP
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
In one embodiment, the disclosure relates to a method and apparatus for surface recovery of a polymer insulation layer through implantation. The method includes providing a substrate having thereon a conductive pad and an insulation layer, optionally processing the conductive pad to remove oxide layer formed on the conductive pad and conducting ion implantation to recover dielectric properties of the insulation layer.
Public/Granted literature
- US20060113640A1 Method and apparatus for polymer dielectric surface recovery by ion implantation Public/Granted day:2006-06-01
Information query
IPC分类:
