发明授权
US07718536B2 Planarization process for pre-damascene structure including metal hard mask
有权
包括金属硬掩模在内的前镶嵌结构的平面化处理
- 专利标题: Planarization process for pre-damascene structure including metal hard mask
- 专利标题(中): 包括金属硬掩模在内的前镶嵌结构的平面化处理
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申请号: US11160262申请日: 2005-06-16
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公开(公告)号: US07718536B2公开(公告)日: 2010-05-18
- 发明人: Chia-Lin Hsu
- 申请人: Chia-Lin Hsu
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Jianq Chyun IP Office
- 主分类号: H01L21/461
- IPC分类号: H01L21/461
摘要:
A planarization process for a pre-damascene structure is described, wherein the pre-damascene structure includes a metal hard mask that is disposed on a first material layer with a damascene opening therein and a second material layer that fills the damascene opening and covers the metal hard mask. A first CMP step is conducted using a first slurry to remove the second material layer outside the damascene opening. A second CMP step is conducted using a second slurry to remove the metal hard mask.
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