发明授权
- 专利标题： Tuned tensile stress low resistivity slot contact structure for n-type transistor performance enhancement
- 专利标题（中）： 调谐拉伸应力低电阻率槽接触结构为n型晶体管性能提升
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申请号： US11647977申请日： 2006-12-29
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公开(公告)号： US07719062B2公开(公告)日： 2010-05-18
- 发明人: Kevin J. Fischer , Vinay B. Chikarmane , Brennan L. Peterson
- 申请人： Kevin J. Fischer , Vinay B. Chikarmane , Brennan L. Peterson
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A method for forming a slot contact structure for n-type transistor performance enhancement. A slot contact opening is formed to expose a contact region, and a barrier plug is disposed within a portion of the slot contact opening in order to induce a tensile stress on an adjacent channel region. The remainder of the slot contact opening is filled with a lower resistivity contact metal. Barrier plug deposition temperature can be varied in order to tune the tensile stress on the adjacent channel region.
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