发明授权
US07719754B2 Multi-thickness layers for MEMS and mask-saving sequence for same
有权
用于MEMS的多层厚层和相同的掩模保存顺序
- 专利标题: Multi-thickness layers for MEMS and mask-saving sequence for same
- 专利标题(中): 用于MEMS的多层厚层和相同的掩模保存顺序
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申请号: US12242189申请日: 2008-09-30
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公开(公告)号: US07719754B2公开(公告)日: 2010-05-18
- 发明人: Sapna Patel , Fan Zhong
- 申请人: Sapna Patel , Fan Zhong
- 申请人地址: US CA San Diego
- 专利权人: Qualcomm Mems Technologies, Inc.
- 当前专利权人: Qualcomm Mems Technologies, Inc.
- 当前专利权人地址: US CA San Diego
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: G02B26/00
- IPC分类号: G02B26/00 ; G02B26/08
摘要:
In various embodiments described herein, methods for forming a plurality of microelectromechanical systems (MEMS) devices on a substrate are described. The MEMS devices comprise x number of different sacrificial or mechanical structures with x number of different sacrificial structure thicknesses or mechanical structure stiffnesses and wherein the x number of sacrificial or mechanical structures are formed by x-1 depositions and x-1 masks.
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