发明授权
US07719754B2 Multi-thickness layers for MEMS and mask-saving sequence for same 有权
用于MEMS的多层厚层和相同的掩模保存顺序

Multi-thickness layers for MEMS and mask-saving sequence for same
摘要:
In various embodiments described herein, methods for forming a plurality of microelectromechanical systems (MEMS) devices on a substrate are described. The MEMS devices comprise x number of different sacrificial or mechanical structures with x number of different sacrificial structure thicknesses or mechanical structure stiffnesses and wherein the x number of sacrificial or mechanical structures are formed by x-1 depositions and x-1 masks.
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