摘要:
This disclosure provides systems, methods and apparatuses for pixel vias. In one aspect, a method of forming an electromechanical device having a plurality of pixels includes depositing an electrically conductive black mask on a substrate at each of four corners and along at least one edge region of each pixel, depositing a dielectric layer over the black mask, depositing an optical stack including a stationary electrode over the dielectric layer, and depositing a mechanical layer over the optical stack. The method further includes providing a conductive via in a first pixel of the plurality of pixels, the via disposed in the dielectric layer and electrically connecting the stationary electrode to the black mask, the via disposed in a position along an edge of the first pixel, spaced offset from the edge of the first pixel in a direction towards the center of the first pixel.
摘要:
Pixels that include display elements that are configured with different structural dimensions corresponding to the color of light they provide are disclosed. In one implementation, a display device includes an array having a plurality of electromechanical pixels disposed on a substrate, each pixel including at least a first display element and a second display element. Each of the first and second display elements interferometrically modulating light by moving a reflective element between a relaxed position spaced apart from the substrate to an actuated position further away from the substrate than the relaxed position by applying a voltage across the reflective element and a stationary electrode. The stationary electrode of each display element is sized to provide actuation of the movable reflective element using the same actuation voltage even though the electrical gap through which the reflective element moves is different within a pixel.
摘要:
Systems, methods and apparatus are provided for electromechanical systems devices having a non-uniform gap under a mechanical layer. An electromechanical systems device includes a movable element supported at its edges over a substrate by at least two support structures. The movable element can be spaced from the substrate by a gap having two or more different heights in two or more corresponding distinct regions. The gap has a first height in a first region below the gap, such as an active area of the device, and a second height in a second region adjacent the support structure. In an interferometric modulator implementation, the second region can be encompasses within an anchor region with a black mask.
摘要:
An electromechanical systems device includes a plurality of supports disposed over a substrate and a deformable reflective layer disposed over the plurality of supports. The deformable reflective layer includes a plurality of substantially parallel columns extending in a first direction. Each column has one or more slots extending in a second direction generally perpendicular to the first direction. The slots can be created at boundary edges of sub-portions of the columns so as to partially mechanically separate the sub-portions without electrically disconnecting them. A method of fabricating an electromechanical device includes depositing an electrically conductive deformable reflective layer over a substrate, removing one or more portions of the deformable layer to form a plurality of electrically isolated columns, and forming at least one crosswise slot in at least one of the columns.
摘要:
This disclosure provides systems, methods and apparatuses for supporting a mechanical layer. In one aspect, an electromechanical systems device includes a substrate, a mechanical layer, and a post positioned on the substrate for supporting the mechanical layer. The mechanical layer is spaced from the substrate and defines one side of a gap between the mechanical layer and the substrate, and the mechanical layer is movable in the gap between an actuated position and a relaxed position. The post includes a wing portion in contact with a portion of the mechanical layer, the wing portion positioned between the gap and the mechanical layer. The wing portion can include a plurality of layers configured to control the curvature of the mechanical layer.
摘要:
A method and apparatus for controlling waveguide birefringence by selection of a waveguide core width for a tuned top clad is described herein. In one example, a dopant concentration within a top cladding material is between 3-6% (wt.). Given a tuned top cladding composition, a width of the waveguide core is pre-selected such that birefringence is minimized, i.e., a zero, or near zero. The desirable width of the waveguide core is determined by calculating the distribution of stress in the top cladding over a change in temperature. From this distribution of stress, a relationship between the polarization dependent wavelength and variable widths of the waveguide in the arrayed waveguide grating are determined. This relationship determines a zero value, or near zero value, of polarization dependent wavelength for a given range of waveguide widths. Accordingly, the width of the waveguide may be selected such that the polarization dependent wavelength is minimized.
摘要:
A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit. A GeBPSG top clad layer for an optical waveguide structure of a planar lightwave circuit is fabricated such that the top clad layer comprises doped silica glass, wherein the dopant includes Ge (Germanium), P (Phosphorus), and B (Boron). In depositing a top clad layer for the optical waveguide, three separate doping gasses (e.g., GeH4, PH3, and B2H6) are added during the PECVD (plasma enhanced chemical vapor deposition) process to make Ge, P and B doped silica glass (GeBPSG). The ratio of the Ge, P, and B dopants is configured to reduce the formation of crystallization areas within the top clad layer and maintain a constant refractive index within the top clad layer across an anneal temperature range. A thermal anneal process for the top clad layer can be a temperature within a range of 950 C to 1050 C. The GeBPSG top clad layer reduces the insertion loss of passive arrayed waveguide grating devices and active planar lightwave circuit devices.
摘要:
A method and apparatus for controlling waveguide birefringence by selection of a waveguide core width for a tuned top clad is described herein. A tuned top cladding describes a pre-existing dopant concentration within a top cladding material. Given a tuned top cladding composition, a width of the waveguide core is pre-selected such that birefringence is minimized, i.e., a zero, or near zero. The desirable width of the waveguide core is determined by calculating the distribution of stress in the top cladding over a change in temperature. From this distribution of stress, a relationship between the polarization dependent wavelength and variable widths of the waveguide in the arrayed waveguide grating are determined. This relationship determines a zero value, or near zero value, of polarization dependent wavelength for a given range of waveguide widths. Accordingly, the width of the waveguide may be selected such that the polarization dependent wavelength is minimized.
摘要:
This relates to optical devices such as planar light-wave components/circuits which are designed to have a high waveguide pattern density effecting a higher etch selectivity and overall improved dimensional control of the functional waveguides on the optical device.
摘要:
A method of making a polarization insensitive optical waveguide structure. An optical core layer is formed on a substrate, wherein the optical core layer has a higher refractive index than the substrate. A mask is formed over the optical core layer. The unmasked areas of the optical core layer are then over-etched to define the core, wherein the over-etching removes the unmasked area of the optical core layer and a portion of the substrate disposed beneath the unmasked area, and defines the optical core. The mask is subsequently removed from the optical core. A cladding layer is then formed over the optical core and the substrate, the cladding layer having a lower refractive index than the optical core, to form a polarization insensitive optical waveguide structure. The amount of over-etching can be controlled to control an amount of substrate disposed beneath the unmasked area of the optical core layer that is removed. The amount of substrate removed, in turn, controls the polarization sensitivity of the optical waveguide structure. The amount of the portion of the substrate removed during the over-etching can be determined to minimize the polarization dependent wavelength shift and the polarization dependent loss of the optical waveguide structure. The amount of the portion of the substrate removed during the over-etching can be determined in accordance with a blanket stress of the cladding layer. The over-etching can be within a range between 7.5 percent and 30 percent.