发明授权
- 专利标题: Method for producing shock and tamper resistant microelectronic devices
- 专利标题(中): 冲击和防篡改微电子器件的制造方法
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申请号: US11942572申请日: 2007-11-19
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公开(公告)号: US07723162B2公开(公告)日: 2010-05-25
- 发明人: Curtis W. Anderson , James A. Sangiorgi
- 申请人: Curtis W. Anderson , James A. Sangiorgi
- 申请人地址: US AZ Phoenix
- 专利权人: White Electronic Designs Corporation
- 当前专利权人: White Electronic Designs Corporation
- 当前专利权人地址: US AZ Phoenix
- 代理机构: Squire, Sanders & Demspey L.L.P.
- 代理商 Allen J. Moss; Alex Starkovich
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method of producing a microelectronic device resistant to tampering, inspection and damage from surrounding environment or operating conditions includes: (i) applying an adhesion layer on a circuit including a die fixed and electrically connected to a laminate substrate; (ii) spraying, through a flame spray process, a tamper resistant coating over the applied adhesion layer; (iii) applying a first encapsulant for filling spaces and air pockets; (iv) removing air and gases from the first encapsulant; and (v) applying a second encapsulant around the first encapsulant for providing a moisture barrier 42 and handling surfaces for the microelectronic device.
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