发明授权
- 专利标题： Plasma CVD apparatus
- 专利标题（中）： 等离子体CVD装置
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申请号： US11102727申请日： 2005-04-11
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公开(公告)号： US07723218B2公开(公告)日： 2010-05-25
- 发明人: Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
- 申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
- 申请人地址： unknown Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： unknown Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP09-136092 19970509
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
公开/授权文献
- US20050176221A1 Plasma CVD apparatus 公开/授权日：2005-08-11
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