发明授权
US07727332B2 Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
有权
选择性掩蔽III-N层和制备独立III-N层或器件的方法以及由此得到的产物
- 专利标题： Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby
- 专利标题（中）： 选择性掩蔽III-N层和制备独立III-N层或器件的方法以及由此得到的产物
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申请号： US11614508申请日： 2006-12-21
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公开(公告)号： US07727332B2公开(公告)日： 2010-06-01
- 发明人: Frank Habel , Ferdinand Scholz , Barbara Neubert , Peter Brückner , Thomas Wunderer
- 申请人： Frank Habel , Ferdinand Scholz , Barbara Neubert , Peter Brückner , Thomas Wunderer
- 申请人地址： DE Freiberg
- 专利权人： Freiberger Compound Materials GmbH
- 当前专利权人： Freiberger Compound Materials GmbH
- 当前专利权人地址： DE Freiberg
- 代理机构： Foley & Lardner LLP
- 主分类号： C30B28/12
- IPC分类号： C30B28/12 ; C30B25/00
摘要：
In a process for forming a mask material on a III-N layer, wherein III denotes an element of the group III of the Periodic Table of Elements, selected from Al, Ga and In, a III-N layer having a surface is provided which comprises more than one facet. Mask material is selectively deposited only on one or multiple, but not on all facets. The deposition of mask material may be particularly carried out during epitaxial growth of a III-N layer under growth conditions, by which (i) growth of at least a further III-N layer selectively on a first type or a first group of facet(s) and (ii) a deposition of mask material selectively on a second type or a second group of facet(s) proceed simultaneously. By the process according to the invention, it is possible to produce free-standing thick III-N layers. Further, semiconductor devices or components having special structures and layers can be produced.
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