发明授权
- 专利标题： Processing method, manufacturing method of semiconductor device, and processing apparatus
- 专利标题（中）： 半导体装置的加工方法，制造方法以及加工装置
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申请号： US12216228申请日： 2008-07-01
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公开(公告)号： US07727853B2公开(公告)日： 2010-06-01
- 发明人: Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
- 申请人： Tomoyuki Takeishi , Kenji Kawano , Hiroshi Ikegami , Shinichi Ito , Riichiro Takahashi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2002-139083 20020514; JP2002-275894 20020920
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.
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