发明授权
- 专利标题： Sonic irradiation during wafer immersion
- 专利标题（中）： 晶片浸入时的声光照射
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申请号： US12286243申请日： 2008-09-29
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公开(公告)号： US07727863B1公开(公告)日： 2010-06-01
- 发明人: Bryan L. Buckalew , Jonathan D. Reid , Johanes H. Sukamto , Frederick Dean Wilmot , Richard S. Hill
- 申请人： Bryan L. Buckalew , Jonathan D. Reid , Johanes H. Sukamto , Frederick Dean Wilmot , Richard S. Hill
- 申请人地址： US CA San Jose
- 专利权人： Novellus Systems, Inc.
- 当前专利权人： Novellus Systems, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Weaver Austin Villeneuve & Sampson LLP
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.
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