公开(公告)号：US08703615B1

公开(公告)日：2014-04-22

申请号：US13367710

申请日：2012-02-07

申请人： Thomas A. Ponnuswamy ,  John H. Sukamto ,  Jonathan D. Reid ,  Steven T. Mayer ,  Huanfeng Zhu

发明人： Thomas A. Ponnuswamy ,  John H. Sukamto ,  Jonathan D. Reid ,  Steven T. Mayer ,  Huanfeng Zhu

IPC分类号： H01L21/44

CPC分类号： H01L21/76873 ,  C25D3/38 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864 ,  H01L2221/1089

摘要： Disclosed are methods of depositing and annealing a copper seed layer. A copper seed layer may be deposited on a ruthenium layer disposed on a surface of a wafer and on features in the wafer. The thickness of the ruthenium layer may be about 40 Angstroms or less. The copper seed layer may be annealed in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. Annealing the copper seed layer in a low-oxygen atmosphere may improve the properties of the copper seed layer.

摘要翻译： 公开了沉积和退火铜籽晶层的方法。 可以将铜籽晶层沉积在设置在晶片表面上的钌层和晶片中的特征上。 钌层的厚度可以为约40埃或更小。 铜种子层可以在氧浓度为约2ppm或更少的还原气氛中退火。 在低氧气氛中退火铜籽晶层可以改善铜籽晶层的性能。

公开(公告)号：US08623193B1

公开(公告)日：2014-01-07

申请号：US13110759

申请日：2011-05-18

申请人： Steven T Mayer ,  Jonathan D. Reid

发明人： Steven T Mayer ,  Jonathan D. Reid

IPC分类号： C25D7/12 ,  C25D21/12 ,  H01L21/768

CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  H01L21/76877

摘要： A substantially uniform layer of a metal is electroplated onto a work piece having a seed layer thereon. This is accomplished by employing a “high resistance ionic current source,” which solves the terminal problem by placing a highly resistive membrane (e.g., a microporous ceramic or fretted glass element) in close proximity to the wafer, thereby swamping the system's resistance. The membrane thereby approximates a constant current source. By keeping the wafer close to the membrane surface, the ionic resistance from the top of the membrane to the surface is much less than the ionic path resistance to the wafer edge, substantially compensating for the sheet resistance in the thin metal film and directing additional current over the center and middle of the wafer.

摘要翻译： 将基本上均匀的金属层电镀在其上具有种子层的工件上。 这是通过使用“高电阻离子电流源”来实现的，其通过将高电阻膜（例如，微孔陶瓷或微波玻璃元件）放置在靠近晶片来解决端子问题，从而消除系统的电阻。 因此，膜近似于恒定电流源。 通过保持晶片靠近膜表面，从膜顶部到表面的离子电阻远小于对晶片边缘的离子路径电阻，基本上补偿薄金属膜中的薄层电阻并引导附加电流 在晶片的中心和中间。

公开(公告)号：US08575028B2

公开(公告)日：2013-11-05

申请号：US13108894

申请日：2011-05-16

申请人： Jonathan D. Reid ,  Huanfeng Zhu

发明人： Jonathan D. Reid ,  Huanfeng Zhu

IPC分类号： H01L21/44

CPC分类号： C25D21/12 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76864 ,  H01L21/76882

摘要： Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate.

摘要翻译： 提供了用于沉积铜和其他金属的方法，装置和系统。 在一些实施方案中，将晶片衬底提供给设备。 晶片基板具有具有场区域和特征的表面。 铜层被镀在晶片衬底的表面上。 将铜层退火以将铜从晶片衬底的区域重新分配到特征。 所公开的方法，装置和系统的实施允许晶片衬底中的特征的无空隙自底向上填充。

公开(公告)号：US20130284604A1

公开(公告)日：2013-10-31

申请号：US13869891

申请日：2013-04-24

申请人： Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

发明人： Tighe A. Spurlin ,  Charles L. Merrill ,  Ludan Huang ,  Matthew Thorum ,  Lee Brogan ,  James E. Duncan ,  Frederick D. Wilmot ,  Marshall R. Stowell ,  Steven T. Mayer ,  Haiying Fu ,  David W. Porter ,  Shantinath Ghongadi ,  Jonathan D. Reid ,  Hyosang S. Lee ,  Mark J. Willey

IPC分类号： C25D21/14 ,  C25D17/00 ,  C25D3/38

CPC分类号： C25D21/14 ,  C25D3/38 ,  C25D17/001 ,  C25D17/002 ,  C25D21/12 ,  C25D21/18

摘要： Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

摘要翻译： 公开了将金属电镀到基底上的装置和方法。 电镀装置包括电镀电池和至少一个氧化装置。 电镀电池包括阴极室和阳极室，隔室由金属阳离子通过但防止有机颗粒穿过。 氧化装置（ODD）被配置为将要电镀的金属的阳离子氧化到基底上，该阳离子在电镀期间存在于阳极电解液中。 在一些实施方案中，ODD被实施为碳阳极，其通过电化学方法从阳极电解液中除去Cu（I）。 在其他实施方案中，ODD被实施为氧化装置（OGD）或外加电流阴极保护阳极（ICCP阳极），这两者都增加了阳极电解液溶液中的氧浓度。 还公开了高效电镀的方法。

公开(公告)号：US08415261B1

公开(公告)日：2013-04-09

申请号：US13270809

申请日：2011-10-11

申请人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

发明人： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC分类号： H01L21/00 ,  B01J19/12

CPC分类号： H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

摘要： Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

公开(公告)号：US07776741B2

公开(公告)日：2010-08-17

申请号：US12193644

申请日：2008-08-18

申请人： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

发明人： Jonathan D. Reid ,  Katie Qun Wang ,  Mark J. Willey

IPC分类号： H01L21/44

CPC分类号： H01L25/50 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76898 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor electroplating process deposits copper into the through silicon via hole to completely fill the through silicon via in a substantially void free is disclosed. The through silicon via may be more than about 3 micrometers in diameter and more that about 20 micrometers deep. High copper concentration and low acidity electroplating solution is used for deposition copper into the through silicon vias.

摘要翻译： 公开了一种半导体电镀工艺将铜沉积到通孔硅通孔中以完全填充通孔硅通孔。 直通硅通孔的直径可以大于约3微米，而深度大约为20微米。 使用高铜浓度和低酸度电镀溶液将铜沉积到通孔硅通孔中。

公开(公告)号：US07727863B1

公开(公告)日：2010-06-01

申请号：US12286243

申请日：2008-09-29

申请人： Bryan L. Buckalew ,  Jonathan D. Reid ,  Johanes H. Sukamto ,  Frederick Dean Wilmot ,  Richard S. Hill

发明人： Bryan L. Buckalew ,  Jonathan D. Reid ,  Johanes H. Sukamto ,  Frederick Dean Wilmot ,  Richard S. Hill

IPC分类号： H01L21/322

CPC分类号： C25D7/123 ,  C23C18/1666 ,  C25D5/20 ,  C25D21/04 ,  H01L21/288 ,  H01L21/2885

摘要： Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.

摘要翻译： 当旋转倾斜的晶片被浸入液体处理槽中时，将声波辐射施加到旋转的倾斜晶片的平面表面的晶片部分。 该部分包括晶片的引导外缘区域。 晶片部分的面积显着小于平面晶片表面的总表面积。 功率密度最小化。 结果，从晶片表面去除了气泡，并避免了液槽中的气蚀。 在一些实施方案中，液体浴被去气以抑制气泡形成。

公开(公告)号：US06800187B1

公开(公告)日：2004-10-05

申请号：US09927741

申请日：2001-08-10

申请人： Jonathan D. Reid ,  Steven T. Mayer ,  R. Marshall Stowell ,  Evan E. Patton ,  Jeff A. Hawkins

发明人： Jonathan D. Reid ,  Steven T. Mayer ,  R. Marshall Stowell ,  Evan E. Patton ,  Jeff A. Hawkins

IPC分类号： C25D500

CPC分类号： H01L21/2885 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1669 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/004 ,  C25D17/008

摘要： An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a “snorkel” shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.

摘要翻译： 在电镀期间接合工件的装置有助于在电镀操作期间的电解液流动。 该设备有助于控制电镀溶液流体动力学和电场形状，以保持晶片的局部电镀环境均匀且无气泡。 该装置以便于电解质循环图案的方式保持工件，其中电解质从工件电镀表面的中心向外朝向工件边缘的边缘流动。 该装置将工件保持在工件边缘附近，并且提供了电解液从工件电镀表面的边缘向外流动的流动路径。 该流路具有“浮潜”形状，其中出口高于入口。 此外，流路可以具有跨越保持装置的大部分或全部圆周的槽形状。 它可以由抵抗诸如某些陶瓷的变形和腐蚀的材料制成。

公开(公告)号：US06793796B2

公开(公告)日：2004-09-21

申请号：US09796856

申请日：2001-02-28

申请人： Jonathan D. Reid ,  David Smith ,  Steven T. Mayer ,  Jon Henri ,  Sesha Varadarajan

发明人： Jonathan D. Reid ,  David Smith ,  Steven T. Mayer ,  Jon Henri ,  Sesha Varadarajan

IPC分类号： C25D518

CPC分类号： C25D3/38 ,  C25D5/18 ,  H01L21/2885 ,  H01L21/76877 ,  H05K3/423

摘要： Electroplating methods using an electroplating bath containing metal ions and a suppressor additive, an accelerator additive, and a leveler additive, together with controlling the current density applied to a substrate, avoid defects in plated films on substrates having features with a range of aspect ratios, while providing good filling and thickness distribution. The methods include, in succession, applying DC cathodic current densities optimized to form a conformal thin film on a seed layer, to provide bottom-up filling, preferentially on features having the largest aspect ratios, and to provide conformal plating of all features and adjacent field regions. Including a leveling agent in the electroplating bath produces films with better quality after subsequent processing.

摘要翻译： 使用含有金属离子的电镀浴和抑制剂添加剂，促进剂添加剂和矫光添加剂的电镀方法以及控制施加到基材上的电流密度，避免了具有一定范围的纵横比的特征的基板上的电镀膜的缺陷， 同时提供良好的填充和厚度分布。 这些方法依次包括施加直流阴极电流密度，其优化以在种子层上形成保形薄膜，从而优选地在具有最大纵横比的特征上提供自下而上的填充，并提供所有特征和相邻的特征的保形电镀 场地区域。 在电镀浴中包括流平剂在后续处理后产生更好质量的膜。

公开(公告)号：US06527920B1

公开(公告)日：2003-03-04

申请号：US09706272

申请日：2000-11-03

申请人： Steven T. Mayer ,  Evan E. Patton ,  Robert L. Jackson ,  Jonathan D. Reid

发明人： Steven T. Mayer ,  Evan E. Patton ,  Robert L. Jackson ,  Jonathan D. Reid

IPC分类号： C25B1500

CPC分类号： C25D21/12 ,  C25F7/00 ,  H05K3/241

摘要： An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier between the anode and cathode. The transport barrier limits the chemical transport (via diffusion and/or convection) of all species but allows migration of ionic species (and hence passage of current) during application of sufficiently large electric fields within electrolyte.

摘要翻译： 电镀装置通过产生用于维持单独的阳极电解液和阴极电解液并防止其在电镀室内的混合的机构来防止阳极介导的电解质添加剂的降解。 分离是通过在阳极和阴极之间插入多孔化学传输屏障来实现的。 运输屏障限制了所有物种的化学传输（通过扩散和/或对流），但是在电解质中施加足够大的电场期间允许离子物质的迁移（因此电流的流动）。