发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11493560申请日： 2006-07-27
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公开(公告)号： US07728424B2公开(公告)日： 2010-06-01
- 发明人: Tatsuhiko Asakawa , Hiroki Kato
- 申请人： Tatsuhiko Asakawa , Hiroki Kato
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2005-223805 20050802
- 主分类号： H01L23/12
- IPC分类号： H01L23/12
摘要：
A semiconductor device including: a semiconductor substrate having an electrode; a resin protrusion formed on a surface of the semiconductor substrate on which the electrode is formed, the resin protrusion extending along a straight line and having a sloping region of which a height decreases along the straight line as a distance from a center of the resin protrusion increases; and an interconnect electrically connected to the electrode and extending over the sloping region of the resin protrusion.
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