发明授权
US07731799B2 Substrate processing method, substrate processing apparatus and computer-readable memory medium
失效
基板处理方法，基板处理装置和计算机可读存储介质
- 专利标题： Substrate processing method, substrate processing apparatus and computer-readable memory medium
- 专利标题（中）： 基板处理方法，基板处理装置和计算机可读存储介质
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申请号： US10579423申请日： 2004-12-07
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公开(公告)号： US07731799B2公开(公告)日： 2010-06-08
- 发明人: Takayuki Toshima , Tadashi Iino , Yusuke Saito , Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii
- 申请人： Takayuki Toshima , Tadashi Iino , Yusuke Saito , Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JP2003-420785 20031218
- 国际申请： PCT/JP2004/018176 WO 20041207
- 国际公布： WO2005/059976 WO 20050630
- 主分类号： B08B3/08
- IPC分类号： B08B3/08
摘要：
A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.
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