发明授权
- 专利标题： Cr-capped chromeless phase lithography
- 专利标题（中）： Cr覆盖的无铬相光刻
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申请号： US11181169申请日： 2005-07-14
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公开(公告)号： US07732102B2公开(公告)日： 2010-06-08
- 发明人: Jonathan L. Cobb , Bernard J. Roman , Wei E. Wu
- 申请人： Jonathan L. Cobb , Bernard J. Roman , Wei E. Wu
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Fortkort & Houston P.C.
- 代理商 John A. Fortkort
- 主分类号： G03F1/00
- IPC分类号： G03F1/00
摘要：
A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.
公开/授权文献
- US20070015064A1 Cr-capped chromeless phase lithography 公开/授权日：2007-01-18
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