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公开(公告)号:US07670760B2
公开(公告)日:2010-03-02
申请号:US11369513
申请日:2006-03-06
申请人: Jinmiao James Shen , Jonathan L. Cobb , William D. Darlington , Brian J. Fisher , Mark D. Hall , Vikas R. Sheth , Mehul D. Shroff , James E. Vasek
发明人: Jinmiao James Shen , Jonathan L. Cobb , William D. Darlington , Brian J. Fisher , Mark D. Hall , Vikas R. Sheth , Mehul D. Shroff , James E. Vasek
IPC分类号: G03F1/00
CPC分类号: G03F7/168
摘要: A method for reducing line edge roughness (LER) in a layer of photoresist is provided. In accordance with the method, a layer of photoresist is applied to a substrate. The layer of photoresist is then patterned and annealed in an atmosphere comprising at least one gas selected from the group consisting of hydrogen, nitrogen and fluorine-containing materials. Preferably, the anneal is performed after patterning the photoresist, but either immediately after, or subsequent to, the trim.
摘要翻译: 提供了一种降低光致抗蚀剂层中的线边缘粗糙度(LER)的方法。 根据该方法,将一层光致抗蚀剂施加到基底上。 然后在包括选自氢,氮和含氟材料的至少一种气体的气氛中对光致抗蚀剂层进行构图和退火。 优选地,在图案化光致抗蚀剂之后进行退火,但是在修剪之后或之后。
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公开(公告)号:US06989229B2
公开(公告)日:2006-01-24
申请号:US10400347
申请日:2003-03-27
IPC分类号: G03F7/20
CPC分类号: G03F7/70941 , G03F1/36 , G03F1/70 , G03F7/70433 , H01L21/0274
摘要: Photoresist on a wafer is exposed using tiles on a mask that improve flare performance. Features that are not to be exposed on the photoresist correspond to features on the mask. The various features are surrounded by other features that vary and thus affect flare differently. Selected features have tiles added nearby but also far enough away to improve uniformity in the effects of flare on the various features that are intended to be present in the photoresist. The tiles are made either very small in width or partially absorbing so that the tiles are not resolved in the photoresist. Thus the tiles reduce flare but do not alter the desired pattern in the photoresist.
摘要翻译: 晶片上的光致抗蚀剂使用掩模上的瓷砖进行曝光,从而改善光斑性能。 在光刻胶上不暴露的特征对应于掩模上的特征。 各种特征被不同的其他特征所包围,从而不同地影响耀斑。 选定的特征具有附近附近的瓷砖,但也足够远,以改善光斑对预期存在于光致抗蚀剂中的各种特征的影响的均匀性。 瓷砖制成的宽度非常小或部分吸收,使得瓷砖未在光致抗蚀剂中分辨。 因此,瓷砖减少了光斑,但不改变光刻胶中所需的图案。
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公开(公告)号:US07732102B2
公开(公告)日:2010-06-08
申请号:US11181169
申请日:2005-07-14
申请人: Jonathan L. Cobb , Bernard J. Roman , Wei E. Wu
发明人: Jonathan L. Cobb , Bernard J. Roman , Wei E. Wu
IPC分类号: G03F1/00
CPC分类号: G03F1/34
摘要: A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.
摘要翻译: 光刻掩模适用于将图案赋予基板。 该图案包括多个特征。 多个特征(201)中的至少一个在掩模中实施为具有设置在其上的不透明材料(207)的整体层的相移结构(205)。 该掩模用于将图案赋予半导体衬底上的层。
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