发明授权
- 专利标题: Method for OPC model generation
- 专利标题(中): OPC模型生成方法
-
申请号: US11239863申请日: 2005-09-30
-
公开(公告)号: US07732108B2公开(公告)日: 2010-06-08
- 发明人: O Seo Park
- 申请人: O Seo Park
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: G03F9/00
- IPC分类号: G03F9/00
摘要:
A method for generating or refining an OPC model for use in wafer fabrication. A predetermined feature layout is used to prepare a mask for use in, for example, a photolithographic process. The mask is used to create structures corresponding to mask features on a semiconductor wafer using the mask. Measurements of the actual mask features and wafer features may then be assessed and correlated, and the results used to generate an OPC model or refine an existing one. In addition, the OPC may be used to simulate a fabrication operation by applying the OPC tool to a predetermined layout to produce a mask image and a wafer image, and then comparing the predetermined layout to the simulated wafer image to determine at least one fitness value.
公开/授权文献
- US20070077504A1 Method for OPC model generation 公开/授权日:2007-04-05
信息查询