发明授权
- 专利标题： Magnetic memory device and method of fabricating the same
- 专利标题（中）： 磁记忆装置及其制造方法
-
申请号： US11465075申请日： 2006-08-16
-
公开(公告)号： US07732222B2公开(公告)日： 2010-06-08
- 发明人: Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
- 申请人： Jun-Soo Bae , Jang-Eun Lee , Hyun-Jo Kim , Se-Chung Oh , Kyung-Tae Nam
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 优先权： KR10-2005-0074937 20050816
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
There is provided a magnetic memory device and a method of forming the same. The magnetic memory device includes an invariable pinning pattern and a variable pinning pattern on a substrate. A tunnel barrier pattern is interposed between the invariable pinning pattern and the variable pinning pattern, and the pinned pattern is interposed between the invariable pinning pattern and the tunnel barrier pattern. A storage free pattern is interposed between the tunnel barrier pattern and the variable pinning pattern, and a guide free pattern is interposed between the storage free pattern and the variable pinning pattern. A free reversing pattern is interposed between the storage and guide free patterns. The free reversing pattern reverses a magnetization direction of the storage free pattern and a magnetization direction of the guide free pattern in the opposite directions.
公开/授权文献
信息查询
IPC分类:
